Allicdata Part #: | BF245B_D74Z-ND |
Manufacturer Part#: |
BF245B_D74Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 30V 15MA TO92 |
More Detail: | RF Mosfet N-Channel JFET TO-92-3 |
DataSheet: | BF245B_D74Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | N-Channel JFET |
Frequency: | -- |
Gain: | -- |
Current Rating: | 15mA |
Noise Figure: | -- |
Power - Output: | -- |
Voltage - Rated: | 30V |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BF245 |
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BF245B_D74Z is a type of transistor that is usually grouped in the category of field effect transistors (FETs), more specifically, radio frequency (RF) metal oxide semiconductor field effect transistors (MOSFETs). As opposed to bipolar junction transistors (BJT), FETs do not require current flow to be controlled through a base region, which makes them particularly useful in radio frequency (RF) applications.
The BF245B_D74Z is a dual gate N-channel FET with an 18V drain source voltage and a 0.2A maximum drain current. It has two gates, a source, and a drain. The gate is the control electrode, which forms a voltage divider with the source and the drain, and the source and the drain are the two contacts through which electrons can flow. The gate voltage determines the resistance between the source and the drain, allowing for the adjustment of current.
The working principle of the BF245B_D74Z is simple. When the gate voltage is increased, the drain current increases until it reaches a maximum level, known as the pinch-off voltage. At this point, any further increases in the gate voltage will no longer result in an increase in the drain current. This principle makes FETs ideal for power switching applications, since the resistance between the source and the drain can be easily manipulated.
The BF245B_D74Z is commonly used in RF applications due to its low input capacitance and its high transconductance. It is particularly suited for amplifying very low power or weak signals, or for use as an oscillator in radio frequency (RF) circuits. In addition, it is widely used in switching power supplies, audio amplifiers, and signal processing circuits, thanks to its high efficiency and low on-resistance.
In conclusion, the BF245B_D74Z is a type of dual gate N-channel field effect transistor (FET) that is usually grouped in the category of radio frequency (RF) metal oxide semiconductor field effect transistors (MOSFETs). It is well-suited for use in RF applications due to its high transconductance, low input capacitance, and high efficiency. Finally, it is commonly used in signal processing, switching power supplies, and amplifiers due to its low on-resistance and its ability to be easily manipulated.
The specific data is subject to PDF, and the above content is for reference
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