Allicdata Part #: | BLF521,112-ND |
Manufacturer Part#: |
BLF521,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET NCHA 40V 13DB SOT172D |
More Detail: | RF Mosfet N-Channel 12.5V 10mA 500MHz 13dB 2W CRDB... |
DataSheet: | BLF521,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | N-Channel |
Frequency: | 500MHz |
Gain: | 13dB |
Voltage - Test: | 12.5V |
Current Rating: | 1A |
Noise Figure: | -- |
Current - Test: | 10mA |
Power - Output: | 2W |
Voltage - Rated: | 40V |
Package / Case: | SOT-172D |
Supplier Device Package: | CRDB4 |
Base Part Number: | BLF521 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BLF521,112, also known as a RF N-Channel Junction Field-Effect Transistor (JFET) is designed for high performance broadband switching and small signal amplification that tends to require precise control over a very large frequency band. It is an integrated signal processing component in a variety of areas, from digital communication systems to signal processing and signal switching. Because of its precise control and wide bandwidth, it has become a desirable component for many designs.
Technically speaking, a field effect transistor, more specifically an RF N-Channel Junction Field-Effect Transistor (JFET), is an electronic component that uses a narrowing of the effective transconductance (gain) of a semiconductor device (normally a silicon or germanium crystal) as a result of the application of an electric charge, usually between a pair of gate (G), drain (D), and source (S) terminals. This narrowing, or field effect, is the basis of its operation and the reason why the RF JFET has gained popularity in radio frequency circuitry.
The BLF521,112 is a general purpose 1GHz N-Channel Junction Field-Effect Transistor (JFET). It has a source impedance of 750 ohms, and a maximum drain of up to 1.5 amperes. While it is a good candidate for small-signal, amplitude modulated (AM), and frequency modulated (FM) applications, it is best suited for use in switching and high gain amplifier circuits. This is due to its low-output impedance, wide bandwidth, and low noise characteristics.
The most common uses of the BLF521,112 are in the fields of audio processing, video switching and transmission, user interfaces, computer graphics, medical equipment, digital communications, and mobile phone applications. It is also used in charge-coupled devices (CCDs), optical disk readers, and in the transmission and reception of digital data.
The BLF521,112 has a broad range of working principles. Its advantages lie primarily in its ability to precisely control the frequency band, making it well-suited for many applications. It does this by operating as a switching device that has both positive and negative polarity. When applied in small signal applications, its ability to control the transfer of signals between two nodes becomes extremely effective, since it can be heavily tuned to accurately transfer the desired signals.
In summary, the BLF521,112 is a versatile radio frequency Junction Field-Effect Transistor (JFET) that is used in many different high-performance applications. It is suited for precision control over a very wide frequency band, making it well-suited for small signal amplification, switching, and transmission and reception of digital data. It is also popular due to its low noise characteristics, wide bandwidth, and low output impedance. With the versatility and performance of a BLF521,112, it is no surprise that this once obscure component has quickly become an invaluable part of many design teams.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLF574,112 | Ampleon USA ... | 139.99 $ | 131 | RF FET LDMOS 110V 26.5DB ... |
BLF578,112 | Ampleon USA ... | 223.19 $ | 136 | RF FET LDMOS 110V 24DB SO... |
BLF578XR,112 | Ampleon USA ... | 223.19 $ | 50 | RF FET LDMOS 110V 23.5DB ... |
BLF571,112 | Ampleon USA ... | 59.7 $ | 146 | RF FET LDMOS 110V 27.5DB ... |
BLF573,112 | Ampleon USA ... | 82.06 $ | 80 | RF FET LDMOS 110V 27.2DB ... |
BLF574XR,112 | Ampleon USA ... | 111.59 $ | 86 | RF FET LDMOS 110V 23DB SO... |
BLF573S,112 | Ampleon USA ... | 82.06 $ | 39 | RF FET LDMOS 110V 27.2DB ... |
BLF574XRS,112 | Ampleon USA ... | 111.59 $ | 54 | RF FET LDMOS 110V 23DB SO... |
BLF578XRS,112 | Ampleon USA ... | 209.03 $ | 1000 | RF FET LDMOS 110V 23.5DB ... |
BLF521,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 40V 13DB SOT1... |
BLF542,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 65V 16DB SOT1... |
BLF544,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 65V 7DB SOT17... |
BLF548,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET 2 NC 65V 11DB SOT2... |
BLF546,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET 2 NC 65V 13DB SOT2... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...