BLF521,112 Allicdata Electronics
Allicdata Part #:

BLF521,112-ND

Manufacturer Part#:

BLF521,112

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET NCHA 40V 13DB SOT172D
More Detail: RF Mosfet N-Channel 12.5V 10mA 500MHz 13dB 2W CRDB...
DataSheet: BLF521,112 datasheetBLF521,112 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Transistor Type: N-Channel
Frequency: 500MHz
Gain: 13dB
Voltage - Test: 12.5V
Current Rating: 1A
Noise Figure: --
Current - Test: 10mA
Power - Output: 2W
Voltage - Rated: 40V
Package / Case: SOT-172D
Supplier Device Package: CRDB4
Base Part Number: BLF521
Description

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The BLF521,112, also known as a RF N-Channel Junction Field-Effect Transistor (JFET) is designed for high performance broadband switching and small signal amplification that tends to require precise control over a very large frequency band. It is an integrated signal processing component in a variety of areas, from digital communication systems to signal processing and signal switching. Because of its precise control and wide bandwidth, it has become a desirable component for many designs.

Technically speaking, a field effect transistor, more specifically an RF N-Channel Junction Field-Effect Transistor (JFET), is an electronic component that uses a narrowing of the effective transconductance (gain) of a semiconductor device (normally a silicon or germanium crystal) as a result of the application of an electric charge, usually between a pair of gate (G), drain (D), and source (S) terminals. This narrowing, or field effect, is the basis of its operation and the reason why the RF JFET has gained popularity in radio frequency circuitry.

The BLF521,112 is a general purpose 1GHz N-Channel Junction Field-Effect Transistor (JFET). It has a source impedance of 750 ohms, and a maximum drain of up to 1.5 amperes. While it is a good candidate for small-signal, amplitude modulated (AM), and frequency modulated (FM) applications, it is best suited for use in switching and high gain amplifier circuits. This is due to its low-output impedance, wide bandwidth, and low noise characteristics.

The most common uses of the BLF521,112 are in the fields of audio processing, video switching and transmission, user interfaces, computer graphics, medical equipment, digital communications, and mobile phone applications. It is also used in charge-coupled devices (CCDs), optical disk readers, and in the transmission and reception of digital data.

The BLF521,112 has a broad range of working principles. Its advantages lie primarily in its ability to precisely control the frequency band, making it well-suited for many applications. It does this by operating as a switching device that has both positive and negative polarity. When applied in small signal applications, its ability to control the transfer of signals between two nodes becomes extremely effective, since it can be heavily tuned to accurately transfer the desired signals.

In summary, the BLF521,112 is a versatile radio frequency Junction Field-Effect Transistor (JFET) that is used in many different high-performance applications. It is suited for precision control over a very wide frequency band, making it well-suited for small signal amplification, switching, and transmission and reception of digital data. It is also popular due to its low noise characteristics, wide bandwidth, and low output impedance. With the versatility and performance of a BLF521,112, it is no surprise that this once obscure component has quickly become an invaluable part of many design teams.

The specific data is subject to PDF, and the above content is for reference

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