Allicdata Part #: | 568-2418-ND |
Manufacturer Part#: |
BLF548,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET 2 NC 65V 11DB SOT262A2 |
More Detail: | RF Mosfet 2 N-Channel (Dual) Common Source 28V 160... |
DataSheet: | BLF548,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | 2 N-Channel (Dual) Common Source |
Frequency: | 500MHz |
Gain: | 11dB |
Voltage - Test: | 28V |
Current Rating: | 15A |
Noise Figure: | -- |
Current - Test: | 160mA |
Power - Output: | 150W |
Voltage - Rated: | 65V |
Package / Case: | SOT-262A2 |
Supplier Device Package: | CDFM4 |
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BLF548,112 is a type of transistor called a FET (Field Effect Transistor). It is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and it is used in RF (Radio Frequency) applications.
Field effect transistors are electronically gated semiconductors, meaning they are controlled by the voltage between a source terminal and a gate terminal. A MOSFET is a type of FET which includes a gate region with an insulating layer of oxide between the source and drain terminals. In the case of the BLF548,112, the insulating layer is made of silicon dioxide.
The BLF548,112 has a number of advantages in RF applications. It is highly responsive and has a very low gate-to-source capacitance, meaning it can operate at higher frequencies without distortion. It is also an excellent choice for switching circuits, which require high frequency stability. Its relatively low drain-to-source capacitance also helps it to control current levels accurately, which is essential in switching circuits.
In a circuit, the BLF548,112 has three terminals: the source terminal, the drain terminal and the gate terminal. The source and drain terminals are connected to the device or circuit that needs to be switched on or off. When a voltage is applied to the gate terminal, it creates an electric field, which causes a current to flow through the transistor. This current allows the device or circuit to be switched on or off.
The BLF548,112 can be used in a variety of RF applications, such as signal amplifiers and signal boosters. It is also used in circuits for power control, signal switching, and signal conditioning. As it can operate at high frequencies and has relatively low gate-to-source capacitance, it is useful in communications and networking projects.
Overall, the BLF548,112 is an excellent choice for RF applications. Its low gate-to-source capacitance, high frequency stability, and low drain-to-source capacitance make it a highly reliable and efficient device. It is also cost-effective, making it an attractive option for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLF574,112 | Ampleon USA ... | 139.99 $ | 131 | RF FET LDMOS 110V 26.5DB ... |
BLF578,112 | Ampleon USA ... | 223.19 $ | 136 | RF FET LDMOS 110V 24DB SO... |
BLF578XR,112 | Ampleon USA ... | 223.19 $ | 50 | RF FET LDMOS 110V 23.5DB ... |
BLF571,112 | Ampleon USA ... | 59.7 $ | 146 | RF FET LDMOS 110V 27.5DB ... |
BLF573,112 | Ampleon USA ... | 82.06 $ | 80 | RF FET LDMOS 110V 27.2DB ... |
BLF574XR,112 | Ampleon USA ... | 111.59 $ | 86 | RF FET LDMOS 110V 23DB SO... |
BLF573S,112 | Ampleon USA ... | 82.06 $ | 39 | RF FET LDMOS 110V 27.2DB ... |
BLF574XRS,112 | Ampleon USA ... | 111.59 $ | 54 | RF FET LDMOS 110V 23DB SO... |
BLF578XRS,112 | Ampleon USA ... | 209.03 $ | 1000 | RF FET LDMOS 110V 23.5DB ... |
BLF521,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 40V 13DB SOT1... |
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BLF544,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 65V 7DB SOT17... |
BLF548,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET 2 NC 65V 11DB SOT2... |
BLF546,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET 2 NC 65V 13DB SOT2... |
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