BLF578,112

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The BLF578,112 is a high power digital/RF transistor, developed by Eupec,specifically designed as a high-performance digital/RF power amplifier transistor. It is a later technology with a wide range of features and applications. This article examines the application field, working principle and properties of the BLF578,112.

Application Field

The BLF578,112 power transistor is ideal for linear and digital/RF power amplifier applications as it has high breakdown voltages of > 50V, high DC current gain of > 28dBc, low noise figure of ≤ 2dBc, and low gate-drain capacitance of ≤ 1pF. It is also suitable for use in a variety of other applications such as high-power transmitters, digital switch modules, wireless base station power supply modules and high-power amplifiers. The device also has high reverse transfer capacitance, good thermal dissipation properties and low input/output impedance.

Working Principle

The BLF578,112 is a high-power digital/RF transistor consisting of an N-channel junction field-effect transistor (JFET) integrated into a single monolithic substrate. It is composed of a self-biased JFET structure with a symmetrical structure configured around the gate and drain. A double finger JFET topology is used to ensure that it has high output power and high linearity. Its symmetrical structure allows the current to flow from both sides, thus improving the efficiency of the device significantly. The device is bias stabilized and does not require any external circuitry for stabilization.

The device is optimized for high linearity and has an improved frequency response. It also has a low noise figure of ≤ 2dBc and high output power of > 28dBc. The BLF578,112 also has a wide operating frequency range of 0.1-1000MHz, making it suitable for a variety of applications. Moreover, it has a high breakdown voltage of > 50V, making it capable of handling high output power even at high-voltage conditions.

Properties

The BLF578,112 is a high power, high linearity, low noise and wide-frequency device with a high breakdown voltage. The device has high power handling capability and excellent thermal dissipation properties, due to its symmetrical structure. It also has low input/output impedance and high reverse transfer capacitance. Moreover, it has a high DC current gain of > 28dBc and small-signal bandwidth of > 30MHz. The device also has improved frequency response and low gate-drain capacitance of ≤ 1pF.

To sum up, the BLF578,112 is a high power digital/RF transistor that has high linearity, low noise and low input/output impedance. It has wide operating frequency range and high breakdown voltage. The device also has excellent thermal dissipation properties and low gate-drain capacitance. The transistor is suitable for linear and digital/RF power amplifier applications, as well as other applications such as high-power transmitters and digital switch modules.

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