BLF574,112 Allicdata Electronics
Allicdata Part #:

568-4736-ND

Manufacturer Part#:

BLF574,112

Price: $ 139.99
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 110V 26.5DB SOT539A
More Detail: RF Mosfet LDMOS (Dual), Common Source 50V 1A 225MH...
DataSheet: BLF574,112 datasheetBLF574,112 Datasheet/PDF
Quantity: 131
1 +: $ 127.26000
10 +: $ 121.88300
Stock 131Can Ship Immediately
$ 139.99
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: LDMOS (Dual), Common Source
Frequency: 225MHz
Gain: 26.5dB
Voltage - Test: 50V
Current Rating: 56A
Noise Figure: --
Current - Test: 1A
Power - Output: 400W
Voltage - Rated: 110V
Package / Case: SOT539A
Supplier Device Package: SOT539A
Description

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The BLF574,112 is a semiconductor device that falls under the transistors – FETS, MOSFETs – RF (radio frequency) category. It is a noise figure optimized gain block transistor that can be used for a wide range of commercial, industrial and amateur applications. This device has often been considered a very viable solution for RF amplifier design.

The features and specifications of the BLF574,112 make it suitable for use in commercial, industrial and amateur applications. This transistor is manufactured using the latest GaAs MESFET (Metal Oxide Semiconductor Field Effect Transistor) technology, which can offer enhanced performance and reliability. This device is capable of working well in ultra-wide bandwidths, and it has an exceptional noise figure of 1 dB or lower. This noise figure is one of the major attractions of the BLF574,112. The power handling capacity of this transistor is quite impressive- it can operate as an amplifier with a power output of 80 W or higher.

The construction of the BLF574,112 consists of two distinct blocks- a single amplifier stage with input and output matching. The input matching block consists of two capacitors, two resistors and one inductor that can be used to match the input signal to the transistor. The output impedance matching block contains two additional resistors that help adjust the current gain. This transistor can be used as an amplifier with almost any signal, providing excellent power matching for both the high- and low- frequency signals. The maximum current gain offered by this device is 75 dB or greater.

The BLF574,112 has a wide range of applications. It can be used in linear and switching amplifiers. It is typically used as an intermediate-frequency amplifier or an RF amplifier. It can also be used in CATV transmitter and receiver applications, or as a radar receiver amplifier. This device is suitable for use in a variety of RF applications, including cellular systems, satellite communications, and HF/shortwave amplifiers.

The working principle of the BLF574,112 is fairly simple. This transistor is designed to be powered by a DC voltage, which is then amplified and converted into an output signal by the device. The device\'s input matching input block ensures that the input signal is correctly matched to the device, while the output impedance matching block ensures that current gains are adjusted correctly. The BLF574,112 is designed to be used as an amplifier and not as an oscillator, and thus there is no feedback circuit. The device operates by amplifying the input signal and converting it to an output signal.

Overall, the BLF574,112 is a reliable and cost-effective device that is suitable for a wide range of applications. Its noise figure is one of its major attractions, making it a popular choice for RF amplifier designs. Its construction is also quite simple, allowing it to be used as either an intermediate- or RF amplifier. The power handling capacity of this device is quite impressive, allowing it to operate with a high power output.

The specific data is subject to PDF, and the above content is for reference

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