Allicdata Part #: | 568-4736-ND |
Manufacturer Part#: |
BLF574,112 |
Price: | $ 139.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 110V 26.5DB SOT539A |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 1A 225MH... |
DataSheet: | BLF574,112 Datasheet/PDF |
Quantity: | 131 |
1 +: | $ 127.26000 |
10 +: | $ 121.88300 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 225MHz |
Gain: | 26.5dB |
Voltage - Test: | 50V |
Current Rating: | 56A |
Noise Figure: | -- |
Current - Test: | 1A |
Power - Output: | 400W |
Voltage - Rated: | 110V |
Package / Case: | SOT539A |
Supplier Device Package: | SOT539A |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BLF574,112 is a semiconductor device that falls under the transistors – FETS, MOSFETs – RF (radio frequency) category. It is a noise figure optimized gain block transistor that can be used for a wide range of commercial, industrial and amateur applications. This device has often been considered a very viable solution for RF amplifier design.
The features and specifications of the BLF574,112 make it suitable for use in commercial, industrial and amateur applications. This transistor is manufactured using the latest GaAs MESFET (Metal Oxide Semiconductor Field Effect Transistor) technology, which can offer enhanced performance and reliability. This device is capable of working well in ultra-wide bandwidths, and it has an exceptional noise figure of 1 dB or lower. This noise figure is one of the major attractions of the BLF574,112. The power handling capacity of this transistor is quite impressive- it can operate as an amplifier with a power output of 80 W or higher.
The construction of the BLF574,112 consists of two distinct blocks- a single amplifier stage with input and output matching. The input matching block consists of two capacitors, two resistors and one inductor that can be used to match the input signal to the transistor. The output impedance matching block contains two additional resistors that help adjust the current gain. This transistor can be used as an amplifier with almost any signal, providing excellent power matching for both the high- and low- frequency signals. The maximum current gain offered by this device is 75 dB or greater.
The BLF574,112 has a wide range of applications. It can be used in linear and switching amplifiers. It is typically used as an intermediate-frequency amplifier or an RF amplifier. It can also be used in CATV transmitter and receiver applications, or as a radar receiver amplifier. This device is suitable for use in a variety of RF applications, including cellular systems, satellite communications, and HF/shortwave amplifiers.
The working principle of the BLF574,112 is fairly simple. This transistor is designed to be powered by a DC voltage, which is then amplified and converted into an output signal by the device. The device\'s input matching input block ensures that the input signal is correctly matched to the device, while the output impedance matching block ensures that current gains are adjusted correctly. The BLF574,112 is designed to be used as an amplifier and not as an oscillator, and thus there is no feedback circuit. The device operates by amplifying the input signal and converting it to an output signal.
Overall, the BLF574,112 is a reliable and cost-effective device that is suitable for a wide range of applications. Its noise figure is one of its major attractions, making it a popular choice for RF amplifier designs. Its construction is also quite simple, allowing it to be used as either an intermediate- or RF amplifier. The power handling capacity of this device is quite impressive, allowing it to operate with a high power output.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLF574,112 | Ampleon USA ... | 139.99 $ | 131 | RF FET LDMOS 110V 26.5DB ... |
BLF578,112 | Ampleon USA ... | 223.19 $ | 136 | RF FET LDMOS 110V 24DB SO... |
BLF578XR,112 | Ampleon USA ... | 223.19 $ | 50 | RF FET LDMOS 110V 23.5DB ... |
BLF571,112 | Ampleon USA ... | 59.7 $ | 146 | RF FET LDMOS 110V 27.5DB ... |
BLF573,112 | Ampleon USA ... | 82.06 $ | 80 | RF FET LDMOS 110V 27.2DB ... |
BLF574XR,112 | Ampleon USA ... | 111.59 $ | 86 | RF FET LDMOS 110V 23DB SO... |
BLF573S,112 | Ampleon USA ... | 82.06 $ | 39 | RF FET LDMOS 110V 27.2DB ... |
BLF574XRS,112 | Ampleon USA ... | 111.59 $ | 54 | RF FET LDMOS 110V 23DB SO... |
BLF578XRS,112 | Ampleon USA ... | 209.03 $ | 1000 | RF FET LDMOS 110V 23.5DB ... |
BLF521,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 40V 13DB SOT1... |
BLF542,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 65V 16DB SOT1... |
BLF544,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 65V 7DB SOT17... |
BLF548,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET 2 NC 65V 11DB SOT2... |
BLF546,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET 2 NC 65V 13DB SOT2... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...