Allicdata Part #: | 568-12822-ND |
Manufacturer Part#: |
BLF574XR,112 |
Price: | $ 111.59 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 110V 23DB SOT1214A |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 100mA 22... |
DataSheet: | BLF574XR,112 Datasheet/PDF |
Quantity: | 86 |
1 +: | $ 101.44900 |
10 +: | $ 97.16140 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 225MHz |
Gain: | 23.5dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 600W |
Voltage - Rated: | 110V |
Package / Case: | SOT-1214A |
Supplier Device Package: | SOT1214A |
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The BLF574XR,112 is one of a range of linear devices from NXP Semiconductors, which combines a digital input with a linear radio frequency (RF) output. This combination provides a convenient and reliable way for designers to reduce the complexity of their systems. The BLF574XR,112 is a linear RF device with a digital input that allows for remote sensing, control and data communication over non-RF and non-wired connections. It is designed to provide a wide range of RF outputs with exceptional dynamic linearity, high efficiency and low power consumption.
The BLF574XR,112 has a number of applications including cellular, portable radio and other wireless systems, and can be used for both amplification and switching applications. The device supports multiple application fields such as base stations, repeaters, power amplifiers, antennas, mixers and oscillators. It is also suitable for applications that require high linearity, such as radio communication and high-speed direct sequence spread spectrum (DSSS) systems.
The BLF574XR,112 works on the principle of metal-oxide-semiconductor field-effect transistor (MOSFET) technology. This technology uses an oxide layer to control the flow of current through the MOSFET. The oxide layer is made up of two components: a metal oxide gate and a semiconductor substrate. The gate controls the device\'s threshold voltage and current by controlling the gate-to-source capacitance and gate-to-drain capacitance.
The BLF574XR,112 is designed to reduce distortion and increase efficiency by controlling the gate-to-drain capacitance and the gate-to-source capacitance. The device also reduces power consumption and increases speed by controlling the threshold voltage. This means that the device can provide a wide range of linear RF outputs with exceptional linearity, high efficiency and low power consumption.
The BLF574XR,112 also has a number of features including a low input drive level and high output amplitude, low thermal resistance and impedance matching. It also provides an integrated static and dynamic power control system, which helps to further improve the thermal and interference performance. The device also supports multiple application fields, providing a versatile solution for designers looking to reduce their system complexity.
Overall, the BLF574XR,112 is an ideal solution for applications requiring high linearity, such as cellular and portable radio systems. It provides exceptional linearity, high efficiency and low power consumption, making it a reliable solution for designers looking to reduce their system complexity.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLF574,112 | Ampleon USA ... | 139.99 $ | 131 | RF FET LDMOS 110V 26.5DB ... |
BLF578,112 | Ampleon USA ... | 223.19 $ | 136 | RF FET LDMOS 110V 24DB SO... |
BLF578XR,112 | Ampleon USA ... | 223.19 $ | 50 | RF FET LDMOS 110V 23.5DB ... |
BLF571,112 | Ampleon USA ... | 59.7 $ | 146 | RF FET LDMOS 110V 27.5DB ... |
BLF573,112 | Ampleon USA ... | 82.06 $ | 80 | RF FET LDMOS 110V 27.2DB ... |
BLF574XR,112 | Ampleon USA ... | 111.59 $ | 86 | RF FET LDMOS 110V 23DB SO... |
BLF573S,112 | Ampleon USA ... | 82.06 $ | 39 | RF FET LDMOS 110V 27.2DB ... |
BLF574XRS,112 | Ampleon USA ... | 111.59 $ | 54 | RF FET LDMOS 110V 23DB SO... |
BLF578XRS,112 | Ampleon USA ... | 209.03 $ | 1000 | RF FET LDMOS 110V 23.5DB ... |
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