BLF542,112

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BLF542 is an advanced high power, N-channel, lateral MOSFET. It is designed for radio frequency (RF) power applications, including cellular base stations, CATV amplifiers, and other application that benefit from high voltage, low ON resistance, and low gate charge.

This MOSFET has a rated current of 5A and a drain-source voltage of 450V, so it is ideal for high-current, high-power applications. It also features ultra-low gate charge and low ON resistance, making it suitable for high power switching. Additionally, the wide bandwidth and fast switching capabilities result in excellent performance. Finally, it is capable of operating over a wide temperature range.

The working principle of the BLF542 is based on basic MOSFET operation. This device has a N-type MOSFET structure. When the gate voltage is applied, the gate-source voltage increases and holes are attracted to the drain. This results in a current between the drain and source as electrons are pushed away. The current is controlled by the gate voltage.

The BLF542 can also be used in high frequency applications due to its wide frequency range. It has a broad frequency range of DC up to 8GHz. This makes it suitable for applications in microwave ovens, cellular base stations, CATV amplifiers, and other applications that benefit from its high voltage, low ON resistance, and low gate charge. Additionally, it has excellent immunity to cross-talk, making it suitable for high frequency switching applications.

The BLF542 is a versatile MOSFET, designed for applications in radio frequency, high frequency, high power, and high-current applications. Its wide frequency range, low ON resistance, and low gate charge make it ideal for applications that require high efficiency and performance. Additionally, its wide temperature range makes it suitable for operation in a variety of environments.

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