Allicdata Part #: | 568-7538-ND |
Manufacturer Part#: |
BLF573S,112 |
Price: | $ 82.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 110V 27.2DB SOT502B |
More Detail: | RF Mosfet LDMOS 50V 900mA 225MHz 27.2dB 300W SOT50... |
DataSheet: | BLF573S,112 Datasheet/PDF |
Quantity: | 39 |
1 +: | $ 74.59830 |
10 +: | $ 71.07310 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 225MHz |
Gain: | 27.2dB |
Voltage - Test: | 50V |
Current Rating: | 42A |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 300W |
Voltage - Rated: | 110V |
Package / Case: | SOT-502B |
Supplier Device Package: | SOT502B |
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The BLF573S,112 is a semiconductor device that is typically employed in radio frequency (RF) applications. It is a field-effect transistors (FET) device, specifically a metal-oxide-semiconductor (MOSFET). Its design is optimized to provide low input capacitance, fast switching times and improved dynamic range, making it suitable for use in many different applications.
The BLF573S,112 is ideal for use in a wide range of RF applications, including RF power amplifiers, cellular base stations, power management systems and mobile telecommunications. It is also used in military and space applications, such as navigational beacons, satellite communications and radar systems. The device is also suitable for use in commercial and industrial applications, such as indoor and outdoor lighting, motion detectors, remote control systems and security systems.
The BLF573S,112 operates on a unique principle that helps it to achieve the desired low input capacitance, fast switching times and improved dynamic range required for RF applications. This principle is known as "source-gate-drain" construction, which requires the device to have three terminals: a source, gate and drain. These three terminals control the operations of the device.
The BLF573S,112 is designed to allow a certain amount of electric current to flow between its terminals, based on the voltage applied to it. To achieve this, a voltage difference is maintained between the source and gate terminals of the device. An input voltage is applied to the gate terminal, which controls the current flowing between the source and drain terminals. The particular arrangement of the three terminals helps the device to achieve a low input capacitance, resulting in fast switching times and improved dynamic range.
The BLF573S,112 has a maximum operating voltage of 18V, with a peak output current of 18A. It has an output power of up to 65W, making it suitable for a wide range of RF applications. The device is typically provided in packages with an exposed thermal pad and is available in a variety of sizes. In addition, the device can be operated with both positive and negative gate voltages, making it suitable for use in a wide range of applications.
The BLF573S,112 is designed to provide reliable performance in RF applications and is suitable for use in a wide range of commercial, industrial and military applications. The device can be used to control the current flow between its three terminals and is optimized to provide low input capacitance, fast switching times and improved dynamic range. This makes it ideal for use in many different RF applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLF574,112 | Ampleon USA ... | 139.99 $ | 131 | RF FET LDMOS 110V 26.5DB ... |
BLF578,112 | Ampleon USA ... | 223.19 $ | 136 | RF FET LDMOS 110V 24DB SO... |
BLF578XR,112 | Ampleon USA ... | 223.19 $ | 50 | RF FET LDMOS 110V 23.5DB ... |
BLF571,112 | Ampleon USA ... | 59.7 $ | 146 | RF FET LDMOS 110V 27.5DB ... |
BLF573,112 | Ampleon USA ... | 82.06 $ | 80 | RF FET LDMOS 110V 27.2DB ... |
BLF574XR,112 | Ampleon USA ... | 111.59 $ | 86 | RF FET LDMOS 110V 23DB SO... |
BLF573S,112 | Ampleon USA ... | 82.06 $ | 39 | RF FET LDMOS 110V 27.2DB ... |
BLF574XRS,112 | Ampleon USA ... | 111.59 $ | 54 | RF FET LDMOS 110V 23DB SO... |
BLF578XRS,112 | Ampleon USA ... | 209.03 $ | 1000 | RF FET LDMOS 110V 23.5DB ... |
BLF521,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 40V 13DB SOT1... |
BLF542,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 65V 16DB SOT1... |
BLF544,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 65V 7DB SOT17... |
BLF548,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET 2 NC 65V 11DB SOT2... |
BLF546,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET 2 NC 65V 13DB SOT2... |
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