Allicdata Part #: | 568-12823-ND |
Manufacturer Part#: |
BLF578XR,112 |
Price: | $ 223.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 110V 23.5DB SOT539A |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 40mA 225... |
DataSheet: | BLF578XR,112 Datasheet/PDF |
Quantity: | 50 |
1 +: | $ 202.89800 |
10 +: | $ 194.32200 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 225MHz |
Gain: | 23.5dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 40mA |
Power - Output: | 1400W |
Voltage - Rated: | 110V |
Package / Case: | SOT539A |
Supplier Device Package: | SOT539A |
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BLF578XR,112 is an advanced and high-performance field effect transistor (FET) for RF power operations. It is a high frequency MOSFET that is designed to deliver maximum RF output power for both small area devices, as well as integrated circuits. This versatile kind of transistor is ideal for applications in wireless communication systems, RF amplifiers, cellular base station transmitters and transceivers, as well as other wireless communications products.
It works by taking in a small current that induces a large enough voltage on its gate, allowing larger amounts of current to pass through the drain and source. This large current then moves through the drain and source and creates a voltage drop that creates an electric field across the gate. The voltage across the gate determines the frequency of the RF signal that is generated by the RF power operation.
It can be used in various RF devices, such as wireless networks and cellular phones, Wi-Fi and Bluetooth devices, and wireless video transmitters. It can also be used in applications such as high frequency amplifiers, variable gain amplifiers, harmonic distortion control, multi-stage active filters, swept frequency linear power amplifiers, and voltage variable windows.
The BLF578XR,112 has very low noise levels, excellent linearity and logarithmic performance that are ideal for various high frequency applications. It also has high current gain, superb DC gain linearity, low distortion, and high reliability for excellent power output over a wide frequency range.
In addition, the transistor has an in-built current range capability, so it can provide very precise control over the output. This makes it perfect for RF applications in which more precise control of the output is required.
This versatility of the BLF578XR,112 makes it a great choice for RF power applications. It provides excellent power output, good linearity, and low distortion performance, making it an ideal choice for use in a wide range of high frequency applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLF574XRS,112 | Ampleon USA ... | 111.59 $ | 54 | RF FET LDMOS 110V 23DB SO... |
BLF574,112 | Ampleon USA ... | 139.99 $ | 131 | RF FET LDMOS 110V 26.5DB ... |
BLF578,112 | Ampleon USA ... | 223.19 $ | 136 | RF FET LDMOS 110V 24DB SO... |
BLF578XR,112 | Ampleon USA ... | 223.19 $ | 50 | RF FET LDMOS 110V 23.5DB ... |
BLF573S,112 | Ampleon USA ... | 82.06 $ | 39 | RF FET LDMOS 110V 27.2DB ... |
BLF571,112 | Ampleon USA ... | 59.7 $ | 146 | RF FET LDMOS 110V 27.5DB ... |
BLF573,112 | Ampleon USA ... | 82.06 $ | 80 | RF FET LDMOS 110V 27.2DB ... |
BLF574XR,112 | Ampleon USA ... | 111.59 $ | 86 | RF FET LDMOS 110V 23DB SO... |
BLF578XRS,112 | Ampleon USA ... | 209.03 $ | 1000 | RF FET LDMOS 110V 23.5DB ... |
BLF521,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 40V 13DB SOT1... |
BLF542,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 65V 16DB SOT1... |
BLF544,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 65V 7DB SOT17... |
BLF548,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET 2 NC 65V 11DB SOT2... |
BLF546,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET 2 NC 65V 13DB SOT2... |
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