BLF573,112

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BLF573,112 is a type of field effect transistor fabricated on 200 V Gallium Arsenide (GaAs) substrate and specifically designed for RF application. It offers high efficiency operation within its operating temperature range of -50 to +150℃ and supports operation up to a frequency of 900 MHz. Here, we discuss its application field and working principle.

Application Field

The BLF573,112 is considered as one of the best cost effective solution for power amplifiers in mobile radio RF application. It can operate efficiently in mobile radio systems for the channels starting from 50 MHz to 900 MHz. It can be used as a high efficiency, low distortion, and low phase noise amplifier. Apart from mobile radio applications, it can also be used in base station applications and high power amplifiers with complex gain network configurations. It can also be used in CATV amplifiers, Low noise amplifiers, and high linearity applications.

Working Principle

The BLF573,112 is based on an Inverted Field Effect Transistor (FET) and is mainly composed of a source, gate and drain. The BLF573,112 has a source connection which is connected to the drain of the FET and works as a common gate connected by an external source, for example a direct current voltage source. In this type of transistor, the drain current is mainly dependent on the drain-source voltage and the gate-source voltage. In addition, the channel conductivity between the source and the drain of the FET is proportional to the gate-source voltage. As a result, the drain current of the transistor can be controlled by the gate-source voltage.

The BLF573,112 is a type of depleted field effect transistor, which means the channel conductivity between the drain and the source of the FET is reduced in a very low level when there is no gate voltage applied. In this condition, any increase in the gate voltage will increase the channel conductivity and results in an increase in the drain current. This type of transistor can be operated in enhancement mode as well as depletion mode.

The BLF573,112 is mainly used in mobile radio application where mobility is one of the key features. It provides high efficiency, low distortion and low phase noise performance with its fast switching time. Its high power gain makes it suitable for use in high power amplifiers and its long-term stability makes it an ideal choice for base station applications.

In conclusion, the BLF573,112 is a cost effective, high efficiency and high performance Field Effect Transistor which is suitable for RF application. It can work efficiently in the frequency range of 50 to 900 MHz and can be used in various applications such as mobile radio, CATV amplifiers and high power amplifiers.

The specific data is subject to PDF, and the above content is for reference