BLF574XRS,112 Allicdata Electronics
Allicdata Part #:

1603-1070-ND

Manufacturer Part#:

BLF574XRS,112

Price: $ 111.59
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 110V 23DB SOT1214B
More Detail: RF Mosfet LDMOS (Dual), Common Source 50V 100mA 22...
DataSheet: BLF574XRS,112 datasheetBLF574XRS,112 Datasheet/PDF
Quantity: 54
1 +: $ 101.44900
10 +: $ 97.16140
Stock 54Can Ship Immediately
$ 111.59
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: LDMOS (Dual), Common Source
Frequency: 225MHz
Gain: 23.5dB
Voltage - Test: 50V
Current Rating: --
Noise Figure: --
Current - Test: 100mA
Power - Output: 600W
Voltage - Rated: 110V
Package / Case: SOT-1214B
Supplier Device Package: LDMOST
Description

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The BLF574XRS,112 is a high-performance transistor operating in the RF range. This device is known for its excellent linearity within its specified frequencies and features power handling capabilities that make it ideal for various types of applications. This article will explain the applications and working principle of the BLF574XRS,112.

Applications

The BLF574XRS,112 is used in a variety of applications including RF power amplifiers, oscillators, and radio frequency (RF) switches. It is also used in cellular, WiMAX, and wireless LAN applications. This transistor is used to provide high-gain amplification of RF signals with low noise and distortion. It is also used in frequency multipliers and mixers, as well as in projection systems and medical imaging.

Working Principle

The BLF574XRS,112 is a field effect transistor (FET) operating in the RF range. It features a high-gain integral gate capacitance and low gate-drain capacitance. This transistor has a low input capacitance, which allows it to be used as a mixer or amplifier. It has a low input capacitance and excellent matching of both input and output signals.The BLF574XRS,112 operates in the RF range using an insulated-gate field effect transistor (IGFET). This IGFET is designed to amplify and switch electrical signals. It uses the gate, drain and source instead of a base-emitter junction and collector to control the operating current. The gate of the IGFET is normally kept at a constant voltage and its resistance is altered by the applied signal. This alters the flow of current between the gate and drain terminals and switches the transistor on or off.

Conclusion

In conclusion, the BLF574XRS,112 is a high-performance transistor operating in the RF range. It is used for amplification and switching of electrical signals and is used in various types of applications. This transistor features a high-gain integral gate capacitance and low gate-drain capacitance. It is an efficient, reliable, and cost-effective transistor that is ideal for many different types of applications.

The specific data is subject to PDF, and the above content is for reference

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