BLP0427M9S20Z Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BLP0427M9S20Z is a FET multipack that includes ESDA05-19A2Z and ESDA05-18A2Z RF FETs. These devices are FETs that combine metal–oxide–semiconductor (MOS) technology and radio frequency (RF) technology, a combination which provides excellent characteristics for high-frequency applications.

The main application field of BLP0427M9S20Z is high-frequency applications. It is designed to provide high performance in power amplification, voltage conversion, impedance matching, and switching for cellular systems and Wi-Fi networks, as well as for applications such as microwave radios, broadcast transmitters, and transceivers, automotive radios, and telecom systems.

The working principle of BLP0427M9S20Z is based on the MOS transistor. This type of transistor is a type of field-effect transistor that operates by controlling the flow of electrons between the source and the drain with the help of a gate. The BLP0427M9S20Z has a gate oxide thickness of 1.2nm and a P+ gate for improved performance and reliability. In addition, the BLP0427M9S20Z has a max Vds breakdown voltage of 30V, a min Rds on-state resistance of 5Ω, and a high frequency and voltage of 3GHz/8V.

In conclusion, BLP0427M9S20Z is a multipack FET that is designed to provide excellent performance in high-frequency applications. It is based on the MOSFET technology, and it has a gate oxide thickness of 1.2nm, a max Vds breakdown voltage of 30V, a min Rds on-state resistance of 5Ω, a high frequency of 3GHz, and a high voltage of 8V. This combination of features makes it ideal for power amplification, voltage conversion, impedance matching, and switching in cellular systems, Wi-Fi networks, microwave radios, broadcast transmitters, transceivers, automotive radios, and telecom systems.

The specific data is subject to PDF, and the above content is for reference