BLP05H6350XRGY Allicdata Electronics

BLP05H6350XRGY Discrete Semiconductor Products

Allicdata Part #:

1603-1052-2-ND

Manufacturer Part#:

BLP05H6350XRGY

Price: $ 42.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 135V 27DB SOT12242
More Detail: RF Mosfet LDMOS (Dual), Common Source 50V 100mA 10...
DataSheet: BLP05H6350XRGY datasheetBLP05H6350XRGY Datasheet/PDF
Quantity: 100
100 +: $ 38.28920
Stock 100Can Ship Immediately
$ 42.12
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS (Dual), Common Source
Frequency: 108MHz
Gain: 27dB
Voltage - Test: 50V
Current Rating: --
Noise Figure: --
Current - Test: 100mA
Power - Output: 350W
Voltage - Rated: 135V
Package / Case: SOT-1224-2
Supplier Device Package: 4-HSOPF
Description

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Introduction

BLP05H6350XRGY is a enhancement-mode high electron mobility transistor (HEMT) manufactured by Semtech Corp. It is designed for use in RF applications, such as wireless communication equipment and amplifier systems. The BLP05H6350XRGY is a power transistor featuring a high current capability, low internally generated noise and a good linearity. This paper will look into the application fields and working principle of the BLP05H6350XRGY.

Application Fields of BLP05H6350XRGY

The high frequency response of the BLP05H6350XRGY makes it ideal for many various RF applications. These applications includes Wireless Local Loop (WLL) systems, mobile phones, cordless telephone systems, short distance radio transmitters, satellite transceivers, GPS applications and auto-bar rings. It is also used in high-power amplifiers in products such as base stations, radar systems and high-power video links.

Working Principle of BLP05H6350XRGY

The main components of the BLP05H6350XRGY are the gate, source and drain regions. The gate region (also known as the control gate) is connected to a DC signal. The source region is connected to a voltage source, while the drain region is connected to ground. When a DC voltage is applied to the gate of the HEMT, the gate region is “pulled up” or “pulled down”, depending on the voltage. This change in voltage creates a corresponding change in the current flow between the source and the drain regions. In other words, the current is controlled by the gate voltage.

Performance of BLP05H6350XRGY

The BLP05H6350XRGY power transistor has a very fast switching speed, which makes it suitable for RF applications. It can achieve a frequency response up to 4GHz. The device is also designed for high performance operation, with a low noise figure that is only 8.0dB. In addition, the BLP05H6350XRGY is designed for high and low current saturation with an advertised current gain of up to 20dB. This allows for higher power levels across a wide range of frequencies.

Conclusion

The BLP05H6350XRGY power transistor is designed for use in a wide variety of RF applications. The high frequency response and low noise figure of the device make it ideal for a range of applications, including wireless local loop systems and mobile phones. In addition, the BLP05H6350XRGY offers a fast switching speed, a high current gain and a high current saturation.

The specific data is subject to PDF, and the above content is for reference

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