BLP05H6350XRGY Discrete Semiconductor Products |
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Allicdata Part #: | 1603-1052-2-ND |
Manufacturer Part#: |
BLP05H6350XRGY |
Price: | $ 42.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 135V 27DB SOT12242 |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 100mA 10... |
DataSheet: | BLP05H6350XRGY Datasheet/PDF |
Quantity: | 100 |
100 +: | $ 38.28920 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 108MHz |
Gain: | 27dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 350W |
Voltage - Rated: | 135V |
Package / Case: | SOT-1224-2 |
Supplier Device Package: | 4-HSOPF |
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Introduction
BLP05H6350XRGY is a enhancement-mode high electron mobility transistor (HEMT) manufactured by Semtech Corp. It is designed for use in RF applications, such as wireless communication equipment and amplifier systems. The BLP05H6350XRGY is a power transistor featuring a high current capability, low internally generated noise and a good linearity. This paper will look into the application fields and working principle of the BLP05H6350XRGY.
Application Fields of BLP05H6350XRGY
The high frequency response of the BLP05H6350XRGY makes it ideal for many various RF applications. These applications includes Wireless Local Loop (WLL) systems, mobile phones, cordless telephone systems, short distance radio transmitters, satellite transceivers, GPS applications and auto-bar rings. It is also used in high-power amplifiers in products such as base stations, radar systems and high-power video links.
Working Principle of BLP05H6350XRGY
The main components of the BLP05H6350XRGY are the gate, source and drain regions. The gate region (also known as the control gate) is connected to a DC signal. The source region is connected to a voltage source, while the drain region is connected to ground. When a DC voltage is applied to the gate of the HEMT, the gate region is “pulled up” or “pulled down”, depending on the voltage. This change in voltage creates a corresponding change in the current flow between the source and the drain regions. In other words, the current is controlled by the gate voltage.
Performance of BLP05H6350XRGY
The BLP05H6350XRGY power transistor has a very fast switching speed, which makes it suitable for RF applications. It can achieve a frequency response up to 4GHz. The device is also designed for high performance operation, with a low noise figure that is only 8.0dB. In addition, the BLP05H6350XRGY is designed for high and low current saturation with an advertised current gain of up to 20dB. This allows for higher power levels across a wide range of frequencies.
Conclusion
The BLP05H6350XRGY power transistor is designed for use in a wide variety of RF applications. The high frequency response and low noise figure of the device make it ideal for a range of applications, including wireless local loop systems and mobile phones. In addition, the BLP05H6350XRGY offers a fast switching speed, a high current gain and a high current saturation.
The specific data is subject to PDF, and the above content is for reference
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