BLP05H6700XRGY Discrete Semiconductor Products

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The BLP05H6700XRGY is a RF power field effect transistor (FET) with high performance over a wide frequency range. The FET is manufactured with advanced process features integrating a lateral double-diffused MOSFET (LDMOS), a resistor, and inductors. Its wide frequency range makes it suitable for a variety of applications, including automotive, aerospace and defense, industrial, medical, and commercial applications.

The BLP05H6700XRGY has an optimized structure that improves the performance of the device in several ways. It has an ultra-low gate capacitance for a power FET, resulting in reduced gate charge and improved efficiency. It also has high gain, typically 35 dB at 1 GHz, resulting in greater power at lower frequencies. This makes it an excellent choice for applications such as point-to-point or base station radio links.

The FET is stabilized against common-mode RF fluctuations and provides excellent linearity, making it suitable for use in high dynamic range applications such as digital radio systems. The device is also protected against reverse polarity and has an input blocking capability up to 500 V.

The BLP05H6700XRGY is designed to be used in a variety of topologies. It can be used as a push-pull amplifier, as a cascode amplifier, or as a common-gate amplifier. The transconductance and gate voltage of the FET can be adjusted to optimize the performance of the application.

The BLP05H6700XRGY has a low source to drain capacitance, enabling operation at high frequencies with low power dissipation. This makes it an ideal choice for RF power amplifier, mixer, and oscillator designs. Additionally, the FET has low noise and low intermodulation distortion, making it suitable for use in high-performance systems.

The BLP05H6700XRGY is a rugged device with 25V gate-source rating and 160 °C operating junction temperature, allowing for long-term reliability with effective thermal management. The FET is also manufactured on an integrated ceramic submount for improved thermal performance in high-power applications.

The BLP05H6700XRGY is an excellent choice for a variety of applications and can help to improve overall performance, reduce costs, and lower risk. The FET has high gain, linearity, and noise performance in addition to an optimized structure and integrated components. It can be used in applications such as automotive, aerospace, industrial, and radio communications, and provides robust performance at high frequencies. Additionally, the FET is protected against reverse polarity and has an input blocking capability up to 500 V. With its low source to drain capacitance, it can be used in RF power amplifier, mixer, and oscillator designs operating at high frequencies.

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