Allicdata Part #: | 1603-1048-2-ND |
Manufacturer Part#: |
BLP05H635XRGY |
Price: | $ 22.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 135V 27DB SOT12242 |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 10mA 108... |
DataSheet: | BLP05H635XRGY Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 20.01920 |
300 +: | $ 19.09720 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 108MHz |
Gain: | 27dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 10mA |
Power - Output: | 35W |
Voltage - Rated: | 135V |
Package / Case: | SOT-1224-2 |
Supplier Device Package: | 4-HSOPF |
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BLP05H635XRGY is a small signal N-type metal oxide semiconductor field effect transistor (MOSFET) designed for RF applications. It has a high input impedance, high gain, and fast switching speed, which makes it suitable for a wide range of RF applications.
The device consists of two N-type conductivities on either side, hence the transistor being termed N-type. The N-type conductivities form the source and drain regions of the transistor, and are separated by the channel region. The channel is controlled by the gate voltage, so the current flow through the channel is determined by the gate voltage.
When the gate voltage is below the threshold voltage, the MOSFET is off, meaning no current can flow through the channel. When the gate voltage is above the threshold voltage, the MOSFET is on and the current flow is determined by the gate voltage. This makes the MOSFET a switch which can be used for switching on and off RF signals.
The BLP05H635XRGY has a high input impedance, which means it can absorb a large amount of current without the voltage being affected. This is useful in RF applications as it allows the device to handle large signal amplitudes without affecting its performance. Additionally, the device has a high gain, meaning it can amplify the RF signal before it is applied to the next stage. Additionally, the device has fast switching speed, meaning it can be used for high speed data transmission.
The BLP05H635XRGY is suitable for a wide range of RF applications, such as wireless and mobile communication, radio frequency identification (RFID) systems, and radar systems. It is also suited for applications requiring high speed data transmission, such as cellular telecommunication and wireless local area networks (WLANs).
In summary, the BLP05H635XRGY is a small signal N-type MOSFET designed for RF applications. It has a high input impedance, high gain, and fast switching speed, which makes it suitable for a wide range of RF applications. It is suitable for applications requiring high speed data transmission, such as wireless and mobile communication, radio frequency identification (RFID) systems, and radar systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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