Allicdata Part #: | 1603-1106-2-ND |
Manufacturer Part#: |
BLP05H6700XRY |
Price: | $ 53.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF MOSFET LDMOS 50V SOT1138-2 |
More Detail: | RF Mosfet LDMOS 50V 100mA 600MHz 26dB 700W SOT1138... |
DataSheet: | BLP05H6700XRY Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 48.84620 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 600MHz |
Gain: | 26dB |
Voltage - Test: | 50V |
Current Rating: | 1.4µA |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 700W |
Voltage - Rated: | 135V |
Package / Case: | SOT-1138-2 |
Supplier Device Package: | SOT1138-2 |
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The BLP05H6700XRY is a NMOS High Voltage (HV) RF device designed for use in broadcast and communication systems. It is designed for applications up to a frequency of 2200MHz with a supply voltage of up to 30V and output power levels up to 30dBm. It is fabricated on 0.5μm CMOS technology and is available in a small form factor surface mount package.
The BLP05H6700XRY can be used for multiple purposes in a variety of broadcast and communication systems, including but not limited to amplifiers for television, fiber optic systems, satellite communication and other consumer electronics, such as remote controls. For example, the device can be used as an amplifier in a television broadcast system to amplify the signal before it reaches the antenna.
The BLP05H6700XRY is a RF MOSFET device which is made up of multiple transistors. It is powered using a high voltage supply (up to 30V) and the output power level is controlled using the gate voltage. As the gate voltage changes, the output power level of the device is also controlled. This makes the device ideal for applications that require precise control of output power level, such as broadcast and communication systems.
The device also has a high input impedance which makes it highly efficient in terms of power consumption. This is achieved by using the Gate-Drain structure of the MOSFET and the floating gate structure which prevents any leakage current from the drain and gate. The high impedance also ensures that no external components, such as capacitors, are required for operation.
The BLP05H6700XRY also has a high gain over the frequency range of 2200MHz and is capable of handling a high power level, up to 30dBm. This makes it ideal for applications such as amplifiers and receivers, where a large dynamic range is needed. The device is also highly selective, meaning it can reject unwanted signals very effectively.
The BLP05H6700XRY is a low noise and low distortion device which makes it well suited for applications such as broadcast and communication systems, as well as for any other applications which require a high level of precision. The device is also highly reliable and has a low power consumption, making it an ideal choice for cost-sensitive applications.
In conclusion, the BLP05H6700XRY is a reliable and efficient device which is well suited for multiple broadcast and communication applications. Its high input impedance, high gain over frequency range, low power consumption and low distortion make it an ideal choice for a range of applications. Its small form factor and surface mount package also make it a great choice for cost-sensitive applications. It is therefore a great choice for anyone who needs a reliable and efficient RF device.
The specific data is subject to PDF, and the above content is for reference
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