BLP05H6150XRGY Allicdata Electronics

BLP05H6150XRGY Discrete Semiconductor Products

Allicdata Part #:

1603-1051-2-ND

Manufacturer Part#:

BLP05H6150XRGY

Price: $ 30.53
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 135V 27DB SOT12242
More Detail: RF Mosfet LDMOS (Dual), Common Source 50V 100mA 10...
DataSheet: BLP05H6150XRGY datasheetBLP05H6150XRGY Datasheet/PDF
Quantity: 100
100 +: $ 27.75000
Stock 100Can Ship Immediately
$ 30.53
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS (Dual), Common Source
Frequency: 108MHz
Gain: 27dB
Voltage - Test: 50V
Current Rating: --
Noise Figure: --
Current - Test: 100mA
Power - Output: 150W
Voltage - Rated: 135V
Package / Case: SOT-1224-2
Supplier Device Package: 4-HSOPF
Description

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BLP05H6150XRGY belongs to a class of Transistors known as FETs, and more specifically, MOSFETs used in the Radio Frequency (RF) domain. These FETs are widely used in circuit design in a variety of applications from consumer electronics to telecommunications technology. It is important to understand the working principle of this type of transistor in order to use it effectively.

A FET is a three-terminal device composed of two controlled rectifiers connected in opposite directions. This means that when current flows through one of the rectifiers, it blocks the flow of current through the other. This creates a designated flowpath for current to pass from one point to another, and is responsible for the transistor’s main feature - amplification.

In the case of MOSFETs, the third terminal consists of a gate electrode which is located between the two rectifiers. The gate electrode is used to control the flow of current between the two rectifiers, allowing users to vary the current level by adjusting the voltage of the gate. This type of transistor is commonly used in RF applications due to its excellent performance in filtering and amplifying signals.

The BLP05H6150XRGY is an example of a RF MOSFET that is capable of being used in a variety of applications. It consists of a N-channel MOSFET with an on-resistance of 10 Ω in an 8-pin power package. Its gate voltage is 4.5 - 5.5V, making it suitable for both low and high-power applications. Its output capacitance and reverse transfer capacitance have been specifically designed for high-frequency applications and it has a maximum junction temperature of 150°C.

This device is widely used in the consumer electronics industry for things such as audio systems and wireless routers, as well as in communications devices such as cell phones and satellite communication systems. It is also widely used in military and industrial applications due to its high-power capabilities and excellent signal transmission capabilities.

In addition to its use in the consumer electronics, communications, and industrial fields, the BLP05H6150XRGY is also used in the medical field. It has been used in a variety of specialist medical imaging tools and systems, such as pacemakers and heart monitors, due to its small size and low-power consumption capabilities.

In summary, the BLP05H6150XRGY belongs to the class of FETs known as MOSFETs, and is used in both low and high-power applications for a variety of purposes. It works by creating a designated flowpath for current to pass and utilizes a gate electrode to adjust the voltage and current level. It can be used in consumer electronics, communications, industrial, and medical applications due to its versatility and excellent performance.

The specific data is subject to PDF, and the above content is for reference

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