BLP05H635XRY

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BLP05H635XRY Application Field and Working Principle

MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is one of the most important type of transistor for switching and amplification application. Notably, due to its salient features such as high immunity to EMI (electromagnetic interference), low switching distortion, low noise, and low power consumption, it has been widely adopted in high-frequency and sensitive measurement as well as in radio frequency (RF) communication systems.

BLP05H635XRY is a common MOSFET device. It is designed for high-speed switching and RF amplifying applications, particularly in the frequency range of 400MHz to 1GHz. The device features very low on-resistance, high transition frequency, a wide SOA (safe operating area) and low gate charge. It also performs very well under harsh temperature and environmental conditions. Thus, it is suitable for use in a broad range of RF applications including high-speed switching, pulse driving, and RF amplifying.

Working Principle

A metal oxide semiconductor field effect transistor, or MOSFET, is a three-terminal device consisting of a source terminal connected to a semiconductor substrate (or body), a drain terminal, and a gate terminal. The type of device used in BLP05H635XRY is a depletion-mode MOSFET Positive-Channel (PMOS).

When no voltage is applied on the gate terminal (VGS = 0V), the whole transistor is in a cut-off state - the source and drain terminals are completely isolated and no current can flow through them. When VGS is increased to a given value (normally above the MOSFET threshold voltage Vth), the drain and source terminals become connected, allowing current to flow through them. The magnitude of the current flowing through the transistor is given by the following equation:

I_D = k(V_GS - V_th)²

Where k is a coefficient that depends on the transistor\'s characteristics.

The BLP05H635XRY transistor has a threshold voltage of -3.3V and maximum power dissipation of 375mW at a channel temperature Tc of 25°C. The on-resistance R_dson (drain-source on-resistance) is 0.5Ω and the off-resistance R_off (drain-source off-resistance) is greater than 1MΩ. The typical transition frequency of f_T and the typical gate-drain charge of Q_g are 200MHz and 14nC respectively. The maximum junction temperature TJ is 175°C.

Conclusion

The BLP05H635XRY MOSFET is a common device for high-speed switching and RF amplifying applications in the frequency range of 400MHz to 1GHz. Its salient features such as low on-resistance, high transition frequency, a wide SOA and low gate charge, high temperature and EMI immunity, and low power consumption makes it suitable for use in a broad range of RF applications.

The specific data is subject to PDF, and the above content is for reference