BLP05H675XRGY Discrete Semiconductor Products |
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Allicdata Part #: | 1603-1049-2-ND |
Manufacturer Part#: |
BLP05H675XRGY |
Price: | $ 24.84 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 135V 27DB SOT12242 |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 20mA 108... |
DataSheet: | BLP05H675XRGY Datasheet/PDF |
Quantity: | 100 |
100 +: | $ 22.57900 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 108MHz |
Gain: | 27dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 20mA |
Power - Output: | 75W |
Voltage - Rated: | 135V |
Package / Case: | SOT-1224-2 |
Supplier Device Package: | 4-HSOPF |
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BLP05H675XRGY is a silicon carbide FET (Field Effect Transistor) module manufactured by Fuji Electric. It is designed to provide superior performance in applications that require RF, high temperatures and high power supplies.
The BLP05H675XRGY utilizes a N-type MOSFET structure, where a gate is used to control the flow of electrons between the drain and source terminals. The FET is designed so that when the voltage applied to the gate is negative, electrons will be allowed to flow freely from the drain to the source. Conversely, when the voltage applied to the gate is positive, electrons will be blocked from flowing freely.
The BLP05H675XRGY is used in a wide range of applications including radio frequency (RF), telecom, broadband, and high frequency power supply applications. Its main advantage is its ability to handle high frequencies and higher temperature operating conditions than other FETs. With a maximum frequency of 6.75GHz, the BLP05H675XRGY can be used in high-speed applications requiring ultra-low noise, low distortion and high linearity. Additionally, its advanced drain structure provides excellent input and output matching characteristics, making it well-suited for operation in multi-port amplifiers, class AB amplifiers, and low noise amplifiers.
The BLP05H675XRGY also offers excellent thermal performance with its Maertz-based lateral temperature compensation (LTC) structure. This temperature compensated structure helps maintain a stable threshold voltage and maximum frequency across a range of temperatures. The BLP05H675XRGY features a high breakdown voltage, low on-resistance, and low gate charge for improved performance in high voltage and high frequency switching applications. Additionally, its low noise performance allows for operation in sensitive RF applications.
The BLP05H675XRGY has a wide variety of applications, making it a great choice for various power supply and RF applications. With its ability to withstand high temperatures, low noise performance, and high linearity, the BLP05H675XRGY is an excellent choice for design engineers looking for reliable high performance in their application.
The specific data is subject to PDF, and the above content is for reference
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