BLP05H6110XRY Allicdata Electronics
Allicdata Part #:

568-12629-2-ND

Manufacturer Part#:

BLP05H6110XRY

Price: $ 28.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 135V 27DB SOT12232
More Detail: RF Mosfet LDMOS (Dual), Common Source 50V 20mA 108...
DataSheet: BLP05H6110XRY datasheetBLP05H6110XRY Datasheet/PDF
Quantity: 1000
100 +: $ 25.46610
Stock 1000Can Ship Immediately
$ 28.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS (Dual), Common Source
Frequency: 108MHz
Gain: 27dB
Voltage - Test: 50V
Current Rating: --
Noise Figure: --
Current - Test: 20mA
Power - Output: 110W
Voltage - Rated: 135V
Package / Case: SOT-1223-2
Supplier Device Package: 4-HSOPF
Description

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The BLP05H6110XRY is a robust, small surface-mounted, radio-frequency (RF) field-effect transistor (FET) designed for use in mobile device applications. It is also known as an “enhanced RF MOSFET,” due to its additional features that help to expand its range of application areas. It has an high-operating voltage, a low-dissipation current, and an exceptionally high-power handling capability. These characteristics make the BLP05H6110XRY an ideal choice for applications that require long-range communications in challenging environments. As a bonus, it is also very energy-efficient.

The BLP05H6110XRY is a three-terminal device with a source, a gate, and a drain. It operates as a voltage-controlled device and is most commonly used as a switch or an amplifier in RF-type applications. By applying different levels of voltage to the gate, the BLP05H6110XRY can be used to control the on/off state of the associated circuit. This makes it ideal for use in mobile applications where the device is used to switch between transmit and receive modes, as well as control output power levels.

When the BLP05H6110XRY is in its active “on” state, the current between the source and the drain will be proportional to the voltage applied to the gate. This property makes it useful as an amplifier, as it can be used to increase the strength of a signal without the need for additional components. This makes the device ideal for RF applications, as it can increase the transmission range of a signal.

The BLP05H6110XRY can also be used as an RF-type switch in mobile device applications. By applying a different voltage to the gate, the device can be switched from an “off” state to an “on” state, and vice versa. This switching capability makes it ideal for applications that require varying levels of output power, as the device can be used to quickly and accurately switch between low-power and high-power modes.

The BLP05H6110XRY is designed for use in mobile device applications, as it is capable of operating at a wide range of frequencies and withstands harsh environmental conditions. It can be used as an amplifier, a switch, or a modulator for the transmission of signals in mobile devices. Its high-power handling capability, low-dissipation current, and wide operating voltage range make the device suitable for use in a variety of challenging environments.

In summary, the BLP05H6110XRY is a high-performance, energy-efficient RF FET that is suitable for use in a variety of mobile device applications. Its versatile design, robust construction, and wide operating voltage range make it an ideal choice for applications that require long-range communications in challenging environments. The device can be used as a switch, an amplifier, or a modulator, and its high-power handling capability and low-dissipation current make it an ideal choice for applications that require varying levels of output power.

The specific data is subject to PDF, and the above content is for reference

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