BLP05H6250XRGY

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The BLP05H6250XRGY is an RF Field Effect Transistor (RF FET) designed to work in a variety of applications. It is a high-power FET that can handle peak output power levels of up to 60W. The device is available in a variety of packages and it is suitable for use in mobile and wireless communication systems, such as wifi and LTE networks.

The device is based on a CMOS technology and it is manufactured using a SOT-343 package. It operates at frequencies from DC to 6GHz, and it has a maximum drain voltage of +40V. The drain-source breakdown voltage (BVDSS) is 65V and the gate-source breakdown voltage (BVGS) is 10V. The on-state drain-source resistance (RDS-ON) is 5Ω and the total gate charge (QG) is 2.2nC.

In terms of features, the BLP05H6250XRGY has a low noise figure, high gain, good linearity, and high efficiency. Additionally, it has an integrated ESD protection circuit and thermal protection. The device is also designed to be highly reliable, with over-temperature protection, short-circuit protection, and power supply protection.

In terms of its application field and working principle, the BLP05H6250XRGY is mainly used in high-power RF applications. It works by controlling the voltage across the gate-source terminals to achieve an output power level that is determined by the impedance of the drain-source terminals. As the voltage across the gate-source terminals is increased, the resistance of the drain-source terminals increases and the output power decreases.

The BLP05H6250XRGY is a popular device for use in high-power, high-frequency applications due to its high power levels and low noise figure. Additionally, it is a cost-effective solution and is widely used in a variety of applications such as wifi and LTE networks, satellite and radio broadcasting, and microwave communication systems.

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