| Allicdata Part #: | BSB008NE2LXXUMA1-ND |
| Manufacturer Part#: |
BSB008NE2LXXUMA1 |
| Price: | $ 0.81 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 25V 46A 2WDSON |
| More Detail: | N-Channel 25V 46A (Ta), 180A (Tc) 2.8W (Ta), 89W (... |
| DataSheet: |  BSB008NE2LXXUMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.72994 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 3-WDSON |
| Supplier Device Package: | MG-WDSON-2, CanPAK M™ |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 16000pF @ 12V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 343nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 0.8 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 46A (Ta), 180A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The BSB008NE2LXXUMA1 is a MOSFET device from NXP, a market-leading company in the world of semiconductor components. This device is a single N-channel MOSFET with a 175mΩ@10V RDS(on) resistance, meaning it can be utilized in a wide range of applications.
Overall, MOSFETs are power switches that allow great flexibility when routing power through various components. This type of transistor is used in a variety of applications, such as motor control and power management. With the right driving force, these devices can be switched on or off with high accuracy and speed. MOSFETs are also extremely efficient and are attractive for power management designs.
The BSB008NE2LXXUMA1 features a 175mΩ@10V RDS(on) resistance, which is ideal for high-powered applications. In particular, the high resistance makes it well-suited for low gate drive current applications, such as when controlling large motors. The low resistance also means it can efficiently pass high currents, making it suitable for high voltage switching applications.
In terms of working principle, the BSB008NE2LXXUMA1 features an insulated gate. This gate controls the device\'s switching, meaning an external voltage needs to be applied in order to turn it on or off. This external voltage is found at the source, drain and gate of the device. When an external voltage is applied to the gate, this will cause a current to flow between the source and drain, ultimately turning the device on or off.
The BSB008NE2LXXUMA1 is suitable for a variety of applications due to its high RDS(on) resistance and insulated gate operation. In particular, the device is well-suited for high voltage switching and motor control applications as it allows for efficient and accurate power routing. As a single MOSFET device, this device also offers cost and size advantages when compared to more complex solutions.
The specific data is subject to PDF, and the above content is for reference
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