BSB015N04NX3GXUMA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSB015N04NX3GXUMA1TR-ND |
Manufacturer Part#: |
BSB015N04NX3GXUMA1 |
Price: | $ 1.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 180A 2WDSON |
More Detail: | N-Channel 40V 36A (Ta), 180A (Tc) 2.8W (Ta), 89W (... |
DataSheet: | BSB015N04NX3GXUMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 1.00711 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 3-WDSON |
Supplier Device Package: | MG-WDSON-2, CanPAK M™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12000pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 142nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 1.5 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Ta), 180A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BSB015N04NX3GXUMA1 is an ultra-thin N-Channel MOSFET that can be utilized in a wide range of applications in the electronics field. It has many attractive features such as high switching speed, high current carrying capacity, low on-state resistance, and low maintenance costs. Due to these features, it is a great choice for PCBs and integrated circuits in the electronics industry.
The BSB015N04NX3GXUMA1 is mainly used for switching applications such as motor control and power management. It is also often used in battery charging circuits, which require a low on-state resistance for high efficiency. It can also be used for data switching purposes, such as for ON/OFF control for power supplies. Aside from all of these great features and benefits, it is also a very affordable and cost-effective solution.
The working principle of the BSB015N04NX3GXUMA1 is based on a field effect transistor (FET). FETs are comprised of three essential components: the gate, source, and drain. The gate acts as a control port, while the source and drain act as input and output ports respectively. The device works by allowing current to flow through the source and drain when a voltage is applied to the gate. However, when the voltage at the gate changes, the current flowing through the device will also change, thus allowing it to act as a switch.
Due to its design and working principle, the BSB015N04NX3GXUMA1 is perfect for applications such as power management and motor control. Its low on-state resistance allows for high efficiency and low power consumption, making it an ideal choice for battery charging circuits and power supplies. Additionally, its speedy switching capability makes it ideal for data switching purposes, such as for ON/OFF control. Furthermore, its cost-effectiveness makes it an attractive option for many different applications.
In conclusion, the BSB015N04NX3GXUMA1 is an extremely versatile device that can be utilized in a wide range of applications. Its low on-state resistance allows for high efficiency and low power consumption, while its speedy switching capability makes it ideal for data switching purposes. Its affordability makes it an attractive option for many different applications. Its features and benefits make it a great choice for PCBs and integrated circuits in the electronics industry.
The specific data is subject to PDF, and the above content is for reference
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