BSB024N03LX G

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The BSB024N03LX G is a n – Channel Enhnacement Mode MOSFET with high electrical performance. It is a reliable product with low on – resistance and low gate – source capacitance. In addition, it operates in a low voltage range with a high temperature stability.

The BSB024N03LX G is especially suitable for applications such as power management and power conversion, as it offers high thermal stability, low on – resistance and low gate – source capacitance.

This MOSFET comes with gate – source voltage tolerance of +/- 5V. It has a maximum drain – source voltage of 40V and a maximum drain current of 1.2A. The operating temperature range is between −55 °C and 150°C.

Working Principle of BSB024N03LX G

The BSB024N03LX G is an enhancement – mode MOSFET. It operates by applying a positive gate – source voltage. The drain – source current will increase exponentially with an increase in the gate – source voltage. When the gate voltage reaches its threshold voltage, the drain – source current will reach its maximum value for the external load.

The BSB024N03LX G has a low capacitance which makes it ideal for switching applications. The low capacitance also makes it ideal for high – speed power management applications. Since the capacitance is low, switching speeds are higher. This makes it suitable for high – frequency applications such as power converters.

Conclusion

The BSB024N03LX G is a n – Channel enhancement mode MOSFET with high electrical performance. It is suitable for applications such as power management and power conversion. It has a low gate – source capacitance which makes it suitable for high – speed and high – frequency applications. This MOSFET is reliable with low on – resistance and operates in a low voltage range with a high temperature stability.

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