BSB014N04LX3GXUMA1 Discrete Semiconductor Products

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A field-effect transistor (FET) is a type of transistor that uses electric fields to control the current flow between its source and drain. The BSB014N04LX3GXUMA1 is a silicon N-channel enhancement-mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This type of FET is used for switching and amplifying signals.

What is the BSB014N04LX3GXUMA1?

The BSB014N04LX3GXUMA1 is a high-current N-channel MOSFET designed for power management and switching applications. This particular device has a breakdown voltage of 30V and a maximum drain current of 30A. It is available in SO-8, D²Pak, and D-Pak surface mount packaging.

Application Fields of the BSB014N04LX3GXUMA1

The BSB014N04LX3GXUMA1 is commonly used in many application areas, including:

• Power switching
• Automotive applications
• Battery charging and discharging
• DC-to-DC converters
• Load switch circuits
• LED lighting
• Industrial motor control
• Power supply circuits

Working Principle of the BSB014N04LX3GXUMA1

The BSB014N04LX3GXUMA1 is an N-channel enhancement mode MOSFET. This means that when the voltage applied to its gate terminal is higher than the threshold voltage of the MOSFET (usually around 2V), an electric field is created in the gate oxide layer. This electric field allows electrons to flow through the metal oxide semiconductor, allowing current to flow between the source and drain terminals.

When a current is not passing through the MOSFET, the voltage applied to the gate is lower than the threshold voltage, so the electric field is not created in the gate oxide layer. This effectively blocks the current, preventing it from flowing between the source and drain.

Conclusion

The BSB014N04LX3GXUMA1 is an N-channel MOSFET designed for power management and switching applications. It has a breakdown voltage of 30V and a maximum drain current of 30A, and is available in a number of different surface mount package formats. It is commonly used in many application areas, including power switching, automotive electronics, and LED lighting.

The working principle of this MOSFET is based on the electric field created in the gate oxide layer when the voltage applied to its gate terminal is higher than the threshold voltage of the MOSFET. This electric field allows current to flow, while when the voltage is lower, the current is blocked.

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