BSB017N03LX3 G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	3-WDSON
Supplier Device Package:	MG-WDSON-2, CanPAK M™
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.8W (Ta), 57W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7800pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	102nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	1.7 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	32A (Ta), 147A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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BSB017N03LX3 G application field and working principle

The BSB017N03LX3 G is a power metal-oxide-semiconductor field-effect transistor (MOSFET) designed for use in high-performance, high-voltage switching applications. Developed by a German manufacturer and based on their Advanced Trench properties, this device is suitable for a wide range of applications, including power MOSFETs for Inverter and DC-DC converter applications in Automotive, industrial, and consumer products.A power MOSFET is unique in the fact that it is capable of performing both “turn-on” and “turn-off” functions, so it can be used for switching purposes. The BSB017N03LX3 G has a breakdown voltage of 17V and can handle gate-source voltages up to 25V. In addition, it has a high current density of 1.0A/mm2, making it a suitable choice for high-power switching applications.The BSB017N03LX3 G is a N-channel enhancement mode MOSFET designed with a cascode-type lateral double-diffused metal-oxide-semiconductor (LDMOS) structure. The device features an optimized layout and a thin-film dielectric layer that ensures an ultra-low on-resistance. This low on-resistance allows the device to provide superior power efficiency and switching characteristics. The device is also designed to reduce noise and layout areas while operating in a variety of linear and switching applications.The working principle of the BSB017N03LX3 G is based on the electric field effect. In an N-channel enhancement mode MOSFET, two p-type and one n-type semiconductor regions are formed. An electric field is then created between the source and drain of the device when a positive voltage is applied to the gate terminal. This electric field creates an inversion region in the n-type semiconductor, with electrons moving from the source to the drain. This creates a low-resistance path between the source and drain, allowing current to flow through the device.To turn off the BSB017N03LX3 G, the gate voltage must be reversed and made negative with respect to the source voltage. This reverse gate voltage polarizes the depletion region of the device, effectively blocking current from flowing between the source and drain. The device is then considered to be in the “off” state.The BSB017N03LX3 G is designed for use in high-performance, high-voltage switching applications. Its low on-resistance and high current density make it a suitable choice for power MOSFETs used in Inverter and DC-DC converter applications in Automotive, industrial, and consumer products. It can also be used in a variety of linear and switching applications due to its excellent performance and noise suppression capabilities.

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