Allicdata Part #: | BSB053N03LPG-ND |
Manufacturer Part#: |
BSB053N03LP G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 71A 2WDSON |
More Detail: | N-Channel 30V 17A (Ta), 71A (Tc) 2.3W (Ta), 42W (T... |
DataSheet: | BSB053N03LP G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 3-WDSON |
Supplier Device Package: | MG-WDSON-2, CanPAK M™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.3W (Ta), 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 5.3 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 71A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BSB053N03LP G is a single-die MOSFET transistor. In the electronics industry, MOSFETs are a type of field-effect transistor that allow current to flow between the source and the drain terminals when a voltage is applied to the gate terminal. MOSFETs are used in a wide range of applications, such as power management, audio and video amplification, communications, analog and digital switching and interfacing, and lighting and motor control.
BSB053N03LP G transistors have several features that make them particularly suitable for use in applications that require large amounts of power. They have a low on-state resistance, which allows them to switch larger currents with less power loss than other transistor types. They also have a very low threshold voltage, which means they can be used with lower gate voltages than other transistors, leading to increased efficiency. Finally, their size and weight are significantly reduced compared to other power transistors, enabling the use of higher power levels in the same space.
The working principle of the BSB053N03LP G transistor is based on the ability of an electric field to control the current flow between a source and a drain. A gate electrode is placed between the source and the drain and a voltage applied to it. The electric field created by the gate voltage attracts carriers (electrons or holes) to move through the channel between the source and the drain. When the gate voltage is high enough, the current between the source and the drain increases significantly, allowing a large current to flow through the channel.
The BSB053N03LP G can be used in various power applications, such as power management, motor control, switching and lighting. Its high efficiency and low on-state resistance make it an ideal choice for applications that require efficient power management. It can also be used in audio and video amplification, communications, and analog and digital interfacing. Additionally, the low gate voltage requirement and the small size of the BSB053N03LP G means it can be used in smaller, more compact designs.
In conclusion, the BSB053N03LP G transistor is an ideal choice for a variety of power applications. It has excellent power efficiency, a low on-state resistance, a low threshold voltage, and a small size. These features make it particularly well-suited for applications that require efficient power management, motor control, switching, and lighting. Additionally, the low gate voltage requirement and the small size of the BSB053N03LP G means it can be used in smaller, more compact designs.
The specific data is subject to PDF, and the above content is for reference
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