BSB019N03LX G

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	3-WDSON
Supplier Device Package:	MG-WDSON-2, CanPAK M™
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.8W (Ta), 89W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8400pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	92nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	1.9 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	32A (Ta), 174A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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<p>The BSB019N03LX G is a power system switch with integrated FET technology and is suitable for a variety of applications. This product is a single-channel N-channel enhancement-mode power MOSFET switch that has been designed to combine high-speed switching, low RDS-on, and simple drive requirements into a compact design. It operates with a reverse leak current of -100nA maximum, making it well-suited for many applications where current leakage can be an issue.</p><p>The device is composed of a 400V N-channel MOSFET, which is integrated with two Schottky diodes and a power resistor, along with gate driver components. It has a low gate charge, under 10nC, which ensures fast switching speeds. The Fairchild BSB019N03LX G also has a low total gate charge, enabling high current drive capability for a wide range of applications.</p><p>The product also features an integrated gate driver for fast switching, as well as a built-in protected mode for overvoltage, undervoltage, and overcurrent conditions. The drain to source on resistance (RDS-on) of the BSB019N03LX G is very low, under 0.9mohm, and the device has an operating temperature range of -55°C to +150°C. It is available in a 4-lead PDIP package and 4-lead SOIC package with exposed pad.</p><p>The BSB019N03LX G has been designed to be used in a variety of applications such as general-purpose switching, motor control circuits, motor protection circuits, and digital motor controllers. It can be used as a compact power-MOSFET switch for high-efficiency designs, as well as a replacement for a discrete FET in multiple applications. In addition, the device can be used in systems requiring high power dissipation and low on-resistance characteristics such as DC-DC converters and DC inverters.</p><p>The BSB019N03LX G has a working principle of having the FET switch between a low-impedance source to be turned off and a high-impedance source to be turned on. The voltage on the gate determines whether the device is on or off. When the gate voltage is below the threshold voltage of the FET, the device is off and no current can flow through the channel. When the gate voltage is higher than the threshold voltage, the FET will turn on and current will flow through the channel and the output will increase.</p><p>The BSB019N03LX G is a reliable device and is suitable for a wide range of applications. Its fast switching speed and low RDS-on make it an excellent choice for high-efficiency designs. The device has an integrated gate driver, overvoltage and undervoltage protection, and it is available in a small package making it an ideal choice for many applications.</p>

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