BSB012NE2LX Discrete Semiconductor Products |
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Allicdata Part #: | BSB012NE2LXTR-ND |
Manufacturer Part#: |
BSB012NE2LX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 170A WDSON-2 |
More Detail: | N-Channel 25V 37A (Ta), 170A (Tc) 2.8W (Ta), 57W (... |
DataSheet: | BSB012NE2LX Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 3-WDSON |
Supplier Device Package: | MG-WDSON-2, CanPAK M™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 57W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4900pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 67nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 37A (Ta), 170A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BSB012NE2LX semiconductor device is classified as a transistor and falls under the FETs and MOSFETs categories as single-type. Transistors are electronic devices composed of three terminals, namely the source, gate, and drain. In their simplest form, transistors act as an electrical switch, allowing the control and regulation of signal flow between two different parts of an electronic circuit. This type of control is commonly referred to as signal amplification or switching.
More specifically, the BSB012NE2LX is a non-insulated gate bipolar junction transistor (NIGBT). It is useful in bridge circuits and is frequently utilized in converter and inverter applications. Inverter applications can be found in a variety of devices, ranging from computers, TVs, and some types of audio equipment. It is also regularly employed in robotics, motor control, and industrial automation equipment.
A closer look at the BSB012NE2LX reveals its specific features, which are responsible for its role in these various applications. This device is a low-power transistor, meaning that it allows a controlled flow of electricity without consuming a great deal of power. It provides a relatively low on-resistance switch and is able to handle currents between 8 and 50A. It also features a voltage range between 600 and 1200V, as well as a high switching speed of around 5ns.
In terms of its working principles, the BSB012NE2LX operates in a similar manner to most transistors. It is based on the principle of minority carrier injection, in which the electron flow from the source to the drain is enabled and regulated by the gate. When the gate is off, it creates a barrier that prevents electrons from moving to the drain. When the gate is on, however, a potential difference is created that allows electron flow. This process is known as modulation, and it is what enables the BSB012NE2LX to amplify signals and provide control to various electronic devices.
In conclusion, the BSB012NE2LX is a useful semiconductor device that finds a variety of applications in both consumer and industrial areas. Its low power consumption, stable switching properties, and high performance make it a great choice for many electronics projects. Moreover, its working principles are based on the idea of minority carrier injection, allowing for signals to be amplified or switched.
The specific data is subject to PDF, and the above content is for reference
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