BSP122,115 Allicdata Electronics
Allicdata Part #:

1727-5406-2-ND

Manufacturer Part#:

BSP122,115

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 200V 0.55A SOT223
More Detail: N-Channel 200V 550mA (Ta) 1.5W (Ta) Surface Mount ...
DataSheet: BSP122,115 datasheetBSP122,115 Datasheet/PDF
Quantity: 3000
1000 +: $ 0.15765
Stock 3000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 750mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BSP122,115 Application Field and Working Principle

BSP122,115 bipolar junction transistors are widely used in power amplifiers, highest frequency converters, and other industrial, military and scientific devices. They are made from either P or N type semiconductor material. As it is a versatile component, BSP122,115 transistors are used in applications requiring relatively low voltages, such as amplifying signals, switching power on or off, and voltage regulation purposes.

BSP122,115 transistors provide low on-state resistance and fast switching speeds. Due to their versatile nature, they are also popularly used in communication systems, audio-visual technology and television sets. BSP122,115 transistors operate over a wide operational temperature range and can withstand heavy thermal and mechanical stresses.

The BSP122,115 is a field effect transistor (FET) with a single gate. A FET consists of a channel between two electrodes, commonly known as the source and drain. When a voltage is applied to the gate, it produces an electric field that alters the conductivity of the channel, thus controlling the flow of current from source to drain. FETs are widely used in digital circuits, as they can be easily turned on and off, making them ideal for controlling the flow of information.

BSP122,115 transistors are constructed with a metal-oxide-semiconductor (MOS) structure. A MOSFET consists of a semiconductor substrate, a dielectric layer, and a metal gate. Applying a voltage across the gate creates an electric field that changes the properties of the channel and controls the flow of current. Due to their low on-state resistance and fast switching speeds, MOSFETs are frequently used in applications such as power amplifiers, switching regulators, motor controls and analog circuits.

The working principle of BSP122,115 transistors is the same as the other field effect transistors. When the voltage applied to the gate is positive with respect to the source, current flows from source to drain. When the voltage applied is negative with respect to the source, no current flows. The amount of current that flows is determined by the strength of the gate voltage. This property makes FETs extremely useful in digital systems, as they can be easily turned on and off.

In conclusion, BSP122,115 transistors are widely used in several different types of applications due to their versatile nature, low on-state resistance, and fast switching speeds. These transistors are constructed with a metal-oxide-semiconductor structure, and their working principle is the same as the other field effect transistors. As they can be easily turned on and off, FETs are especially useful for controlling the flow of information in digital systems.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "BSP1" Included word is 40
Part Number Manufacturer Price Quantity Description
BSP14-3K Panduit Corp 0.23 $ 6000 CONN SPLICE 14-18 AWG CRI...
BSP19TA Diodes Incor... -- 1000 TRANS NPN 350V 0.5A SOT-2...
BSP19AT1 ON Semicondu... -- 1000 TRANS NPN 350V 0.1A SOT22...
BSP125L6433HTMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 600V 120MA SO...
BSP135L6433HTMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 600V 120MA SO...
BSP123E6327T Infineon Tec... 0.0 $ 1000 MOSFET N-CH 100V 370MA SO...
BSP129E6327T Infineon Tec... 0.0 $ 1000 MOSFET N-CH 240V 350MA SO...
BSP170PE6327T Infineon Tec... 0.0 $ 1000 MOSFET P-CH 60V 1.9A SOT2...
BSP171PE6327T Infineon Tec... 0.0 $ 1000 MOSFET P-CH 60V 1.9A SOT2...
BSP125 E6327 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 600V 120MA SO...
BSP125 E6433 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 600V 120MA SO...
BSP125L6327HTSA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 600V 120MA SO...
BSP129L6327HTSA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 240V 350MA SO...
BSP129L6906HTSA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 240V 350MA SO...
BSP135 E6327 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 600V 120MA SO...
BSP135 E6906 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 600V 120MA SO...
BSP135L6327HTSA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 600V 120MA SO...
BSP135L6906HTSA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 600V 120MA SO...
BSP149 E6327 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 200V 660MA SO...
BSP149 E6906 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 200V 660MA SO...
BSP149L6906HTSA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 200V 660MA SO...
BSP123L6327HTSA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 100V 370MA SO...
BSP129E6327 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 240V 350MA SO...
BSP170PE6327 Infineon Tec... 0.0 $ 1000 MOSFET P-CH 60V 1.9A SOT2...
BSP171PE6327 Infineon Tec... 0.0 $ 1000 MOSFET P-CH 60V 1.9A SOT2...
BSP110,115 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 100V 520MA SO...
BSP100,135 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 30V 3.2A SOT2...
BSP149L6327HTSA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 200V 660MA SO...
BSP125H6433XTMA1 Infineon Tec... 0.23 $ 1000 MOSFET N-CH 600V 120MA SO...
BSP129H6327XTSA1 Infineon Tec... -- 1000 MOSFET N-CH 240V 350MA SO...
BSP129H6906XTSA1 Infineon Tec... 0.34 $ 1000 MOSFET N-CH 240V 350MA SO...
BSP16T1 ON Semicondu... -- 1000 TRANS PNP 300V 0.1A SOT-2...
BSP149H6906XTSA1 Infineon Tec... 0.41 $ 1000 MOSFET N-CH 200V 660MA SO...
BSP135H6327XTSA1 Infineon Tec... -- 2000 MOSFET N-CH 600V 120MA SO...
BSP130,115 Nexperia USA... 0.32 $ 4000 MOSFET N-CH 300V 350MA SC...
BSP19AT1G ON Semicondu... -- 1000 TRANS NPN 350V 0.1A SOT22...
BSP19,115 Nexperia USA... 0.15 $ 1000 TRANS NPN 350V 0.1A SOT22...
BSP170PL6327HTSA1 Infineon Tec... 0.0 $ 1000 MOSFET P-CH 60V 1.9A SOT-...
BSP171PL6327HTSA1 Infineon Tec... 0.0 $ 1000 MOSFET P-CH 60V 1.9A SOT-...
BSP149H6327XTSA1 Infineon Tec... -- 1000 MOSFET N-CH 200V 660MA SO...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics