Allicdata Part #: | 1727-5406-2-ND |
Manufacturer Part#: |
BSP122,115 |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 200V 0.55A SOT223 |
More Detail: | N-Channel 200V 550mA (Ta) 1.5W (Ta) Surface Mount ... |
DataSheet: | BSP122,115 Datasheet/PDF |
Quantity: | 3000 |
1000 +: | $ 0.15765 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 100pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 750mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 550mA (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BSP122,115 Application Field and Working Principle
BSP122,115 bipolar junction transistors are widely used in power amplifiers, highest frequency converters, and other industrial, military and scientific devices. They are made from either P or N type semiconductor material. As it is a versatile component, BSP122,115 transistors are used in applications requiring relatively low voltages, such as amplifying signals, switching power on or off, and voltage regulation purposes.
BSP122,115 transistors provide low on-state resistance and fast switching speeds. Due to their versatile nature, they are also popularly used in communication systems, audio-visual technology and television sets. BSP122,115 transistors operate over a wide operational temperature range and can withstand heavy thermal and mechanical stresses.
The BSP122,115 is a field effect transistor (FET) with a single gate. A FET consists of a channel between two electrodes, commonly known as the source and drain. When a voltage is applied to the gate, it produces an electric field that alters the conductivity of the channel, thus controlling the flow of current from source to drain. FETs are widely used in digital circuits, as they can be easily turned on and off, making them ideal for controlling the flow of information.
BSP122,115 transistors are constructed with a metal-oxide-semiconductor (MOS) structure. A MOSFET consists of a semiconductor substrate, a dielectric layer, and a metal gate. Applying a voltage across the gate creates an electric field that changes the properties of the channel and controls the flow of current. Due to their low on-state resistance and fast switching speeds, MOSFETs are frequently used in applications such as power amplifiers, switching regulators, motor controls and analog circuits.
The working principle of BSP122,115 transistors is the same as the other field effect transistors. When the voltage applied to the gate is positive with respect to the source, current flows from source to drain. When the voltage applied is negative with respect to the source, no current flows. The amount of current that flows is determined by the strength of the gate voltage. This property makes FETs extremely useful in digital systems, as they can be easily turned on and off.
In conclusion, BSP122,115 transistors are widely used in several different types of applications due to their versatile nature, low on-state resistance, and fast switching speeds. These transistors are constructed with a metal-oxide-semiconductor structure, and their working principle is the same as the other field effect transistors. As they can be easily turned on and off, FETs are especially useful for controlling the flow of information in digital systems.
The specific data is subject to PDF, and the above content is for reference
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