BSP129E6327 Allicdata Electronics
Allicdata Part #:

BSP129INTR-ND

Manufacturer Part#:

BSP129E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 240V 350MA SOT223
More Detail: N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount ...
DataSheet: BSP129E6327 datasheetBSP129E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 108µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds: 108pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 5V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 240V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BSP129E6327 is a P-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that belongs to the single MOSFET family.

The BSP129E6327 can be used in a variety of applications, such as power switch circuits, current sensing circuits, converters, motor control, and power management circuits. It has a fast switching speed and can be used for high frequency applications for power supply units. It also features a low saturation voltage and a low on-resistance, making it a good choice for power circuits.

When the BSP129E6327 MOSFET is in a cut-off state, the gate voltage determines the drain current. When the gate voltage exceeds a certain threshold, the MOSFET enters the enhancement mode and the drain current increases rapidly. At this stage, the increased current is controlled by the gate voltage.

The BSP129E6327 can be used in a variety of applications because of its high input impedance, high switching speed, and low on-resistance. It can be used to isolate two circuits, control power supply voltage, or as a switch to turn on and off devices, allowing the user to regulate the current or power flow. It can also be used in current sensing circuits, where the current flowing through the MOSFET is used to control the output voltage.

The working principle of the BSP129E6327 MOSFET is simple. It utilizes the properties of an enhancement-mode MOSFET. When a gate voltage is applied to the MOSFET, electrons flow from the source to the drain, creating a channel through which current can flow. The current flowing through the channel is controlled by the voltage applied to the gate, allowing the user to regulate the current or power flow.

In conclusion, the BSP129E6327 is a P-channel enhancement mode MOSFET that has many potential uses in a variety of applications. Its fast switching speed and low on-resistance make it ideal for high frequency applications, while its low saturation voltage and good input impedance make it suitable for power switching and current sensing applications. Its simple and reliable working principle makes it easy to use, allowing the user to regulate the current or power flow.

The specific data is subject to PDF, and the above content is for reference

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