Allicdata Part #: | 1727-5488-2-ND |
Manufacturer Part#: |
BSP250,135 |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 30V 3A SOT223 |
More Detail: | P-Channel 30V 3A (Tc) 1.65W (Ta) Surface Mount SOT... |
DataSheet: | BSP250,135 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.15758 |
Vgs(th) (Max) @ Id: | 2.8V @ 1mA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.65W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BSP250,135: Application Field and Working Principle
The BSP250,135 is a type of field effect transistor (FET), notably a metal-oxide semiconductor field-effect transistor (MOSFET). Specifically, it is a single, symmetric-structure, HEXFET power transistor (sometimes referred to as an Integrated Power Transistor). It has both a drain and a source, which each have three leads, making a total of six connections. Originally designed by International Rectifier, the BSP250,135 is an 800 V rating device that can be used for power converters, power supply and motor control applications.
Working Principle of BSP250,135
The BSP250,135 is a single MOSFET transistor, where the source and drain are connected together in a symmetrical structure. This means that both drain-source and source-drain at the same voltage can be used when the device is turned on. There are three pins present on the device that are used to control its operation. The Gate pin is used to control the ON and OFF state of the device and the Drain and Source pins are used to connect the device to the power supply. The BSP250,135 is designed to be used in power converters, power supplies and motor control applications.
A MOSFET operates on the principle of voltage control. As the voltage between the gate and the source increases, the current from the drain to the source increases. This is because a higher voltage between the gate and the source causes a thin insulated gate to open, allowing current to flow from the drain to the source. When the voltage between the gate and the source decreases, the current from the drain to the source decreases. This is because the thin insulated gate closes, stopping the current from flowing.
Application Scope of BSP250,135
The BSP250,135 is typically employed in high power applications, such as power converters, power supplies and motor control applications. For example, it can be used as a switch when controlling the speed of a motor. The device also has a low on-resistance and is able to operate at up to 800V, making it well-suited for use in high voltage, high power applications. Additionally, due to its low gate capacitance, it is suitable for use in fast switching applications meaning the device can be used in applications that require quick reaction times. The device is also used in some circuits as a level shifter, where the voltage coming in from one side of the circuit is shifted to a different level at the other end.
The BSP250,135 is a popular choice for high power applications due to its ability to work at high voltages, low on resistance and its low gate capacitance. It is an excellent choice when fast reaction time is required, while its symmetric structure makes it well-suited to power applications. The device is robust, reliable and easy to use, making it a popular choice for a variety of power applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BSP296L6433HTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 1.1A SOT... |
BSP299L6327HUSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 500V 400MA SO... |
BSP295E6327T | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.8A SOT2... |
BSP296 E6433 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 1.1A SOT... |
BSP297 E6327 | Infineon Tec... | -- | 1000 | MOSFET N-CH 200V 660MA SO... |
BSP298 E6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 400V 500MA SO... |
BSP298L6327HUSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 400V 500MA SO... |
BSP299 E6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 500V 400MA SO... |
BSP295E6327 | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 1.8A SOT2... |
BSP296E6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 1.1A SOT... |
BSP296NL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 1.2A SOT... |
BSP298H6327XUSA1 | Infineon Tec... | 0.43 $ | 1000 | MOSFET N-CH 400V 500MA SO... |
BSP230,135 | Nexperia USA... | 0.18 $ | 1000 | MOSFET P-CH 300V 0.21A SO... |
BSP225,115 | Nexperia USA... | 0.22 $ | 4000 | MOSFET P-CH 250V 0.225A S... |
BSP297H6327XTSA1 | Infineon Tec... | 0.27 $ | 2000 | MOSFET N-CH 200V 660MA SO... |
BSP299H6327XUSA1 | Infineon Tec... | 0.43 $ | 2000 | MOSFET N-CH 500V 0.4A SOT... |
BSP295L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.8A SOT-... |
BSP296L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 1.1A SOT... |
BSP297L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 200V 660MA SO... |
BSP250,135 | Nexperia USA... | 0.18 $ | 1000 | MOSFET P-CH 30V 3A SOT223... |
BSP250,115 | Nexperia USA... | 0.25 $ | 1000 | MOSFET P-CH 30V 3A SOT223... |
BSP296NH6433XTMA1 | Infineon Tec... | 0.25 $ | 1000 | MOSFET N-CH 100V 1.1A SOT... |
BSP296NH6327XTSA1 | Infineon Tec... | -- | 5000 | MOSFET N-CH 100V 1.2A SOT... |
BSP220,115 | Nexperia USA... | 0.34 $ | 3000 | MOSFET P-CH 200V 0.225A S... |
BSP295H6327XTSA1 | Infineon Tec... | -- | 4000 | MOSFET N-CH 60V 1.8A SOT2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...