BSP297 E6327 Allicdata Electronics
Allicdata Part #:

BSP297E6327-ND

Manufacturer Part#:

BSP297 E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 200V 660MA SOT-223
More Detail: N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount ...
DataSheet: BSP297 E6327 datasheetBSP297 E6327 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 357pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BSP 297 E6327 is an enhancement-mode power MOSFET (metal oxide semiconductor field effect transistor). It is a single-styrene-encapsulated device with a very low on-resistance, which is suitable for switching and power control applications. It is mainly used for DC/DC converters, AC/DC converters, rectifiers, motor drivers, lighting control and other applications that require a high level of current or voltage control.

The BSP 297 E6327 has an internal structure with three terminal connections: drain, source and gate. The source is connected to the negative voltage, the drain is connected to the positive voltage and the gate is used to control the current flow. The gate voltage is used to control the channel resistance between the source and the drain. When a positive voltage is applied to the gate, the channel resistance decreases and the current flows through the channel. When the gate voltage is reduced, the channel resistance increases and the current is blocked. The BSP 297 E6327 has a maximum drain to source voltage of 600V, a maximum drain current of 3A and an on-resistance (Rds) of just 0.042 ohms, making it an ideal choice for power control applications.

The BSP 297 E6327 can be used for both AC and DC applications. For DC applications, it can be used for high efficiency DC/DC converters, battery charging, motor control and more. For AC applications, it can be used for rectifiers, AC/DC converters and other AC power applications. In addition, it can also be used for lighting control applications and other power management applications.

When using the BSP 297 E6327, the drain voltage should not exceed the limits specified in the datasheet. Also, the gate voltage should not exceed +/- 6V, as this may cause permanent damage to the device. Furthermore, proper current-limiting and thermal-protection should be put in place when using the device.

In conclusion, the BSP 297 E6327 is a single-styrene-encapsulated enhancement-mode power MOSFET with very low on-resistance and high current and voltage control capabilities. It can be used for DC/DC converters, AC/DC converters, rectifiers, motor drivers, lighting control and other applications. Care must be taken to ensure that the drain and gate voltages are within the specifications provided in the datasheet and that proper current-limiting and thermal-protection is put in place when using the device.

The specific data is subject to PDF, and the above content is for reference

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