
BSP295L6327HTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSP295L6327HTSA1TR-ND |
Manufacturer Part#: |
BSP295L6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 1.8A SOT-223 |
More Detail: | N-Channel 60V 1.8A (Ta) 1.8W (Ta) Surface Mount PG... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.8V @ 400µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 368pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 1.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BSP295L6327HTSA1 is a dip n-channel enhancement mode field effect transistor (FET) produced by EIC discrete Semiconductor products. It is based on Master Index number of BSP295 and is a part of SOT-23-3 Transistor family. In the series of the SOT-23-3 transistors, the BSP295L6327HTSA1 has the lowest maximum drain current with a maximum continuously drain current of only 1A. It also provides a large drain-source avalanche energy rating of 28 mJ so it can safely handle reversed and low voltage conditions.
The BSP295L6327HTSA1 can be used as a voltage controlled switch in a resistor–transistor logic (RTL) design which consists of three FETs: the BSP295L6327HTSA1, the BSP295L6327MSA1, and the BSP295L6327PAA1. In such a design, the BSP295L6327HTSA1 is used as the main switching element in the RTL logic design, while the other two FETs act as pull-up and pull-down resistors, respectively.
The BSP295L6327HTSA1 is typically used in low-current applications, such as in audio amplifiers and motor controls. It is also used in voltage-controlled oscillators, in applications where its low power consumption is beneficial. Additionally, it can be used as a programming device, or in low-voltage switching circuits.
The BSP295L6327HTSA1 is based on the principle of Field Effect Transistor (FET) switching. A FET is a three-terminal device composed of source and drain regions connected by a gate region. When a voltage is applied to the gate, it rearranges the electric field around the gate by creating a depletion layer between the source and drain. The flow of electrons is then controlled by the applied voltage, resulting in the FET switching from "on" to "off" or vice versa.
When used as a switch, the BSP295L6327HTSA1 can handle up to 30 V with a maximum operating temperature of 85 °C, allowing it to be used in a wide range of temperature environments. In addition, its maximum on-resistance is only 0.7 Ω, making it ideal for high-frequency applications. Furthermore, it can withstand reverse voltage of up to 20V for a safe operation.
The BSP295L6327HTSA1 is a great choice for low-current applications such as audio amplifiers and motor control. Its low power consumption and higher on-resistance tolerance make it ideal for a wide range of applications. Additionally, its high avalanche energy rating provides a good protection against voltage transients and reversed bias conditions.
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