BSP295L6327HTSA1 Allicdata Electronics

BSP295L6327HTSA1 Discrete Semiconductor Products

Allicdata Part #:

BSP295L6327HTSA1TR-ND

Manufacturer Part#:

BSP295L6327HTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 1.8A SOT-223
More Detail: N-Channel 60V 1.8A (Ta) 1.8W (Ta) Surface Mount PG...
DataSheet: BSP295L6327HTSA1 datasheetBSP295L6327HTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 368pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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BSP295L6327HTSA1 is a dip n-channel enhancement mode field effect transistor (FET) produced by EIC discrete Semiconductor products. It is based on Master Index number of BSP295 and is a part of SOT-23-3 Transistor family. In the series of the SOT-23-3 transistors, the BSP295L6327HTSA1 has the lowest maximum drain current with a maximum continuously drain current of only 1A. It also provides a large drain-source avalanche energy rating of 28 mJ so it can safely handle reversed and low voltage conditions.

The BSP295L6327HTSA1 can be used as a voltage controlled switch in a resistor–transistor logic (RTL) design which consists of three FETs: the BSP295L6327HTSA1, the BSP295L6327MSA1, and the BSP295L6327PAA1. In such a design, the BSP295L6327HTSA1 is used as the main switching element in the RTL logic design, while the other two FETs act as pull-up and pull-down resistors, respectively.

The BSP295L6327HTSA1 is typically used in low-current applications, such as in audio amplifiers and motor controls. It is also used in voltage-controlled oscillators, in applications where its low power consumption is beneficial. Additionally, it can be used as a programming device, or in low-voltage switching circuits.

The BSP295L6327HTSA1 is based on the principle of Field Effect Transistor (FET) switching. A FET is a three-terminal device composed of source and drain regions connected by a gate region. When a voltage is applied to the gate, it rearranges the electric field around the gate by creating a depletion layer between the source and drain. The flow of electrons is then controlled by the applied voltage, resulting in the FET switching from "on" to "off" or vice versa.

When used as a switch, the BSP295L6327HTSA1 can handle up to 30 V with a maximum operating temperature of 85 °C, allowing it to be used in a wide range of temperature environments. In addition, its maximum on-resistance is only 0.7 Ω, making it ideal for high-frequency applications. Furthermore, it can withstand reverse voltage of up to 20V for a safe operation.

The BSP295L6327HTSA1 is a great choice for low-current applications such as audio amplifiers and motor control. Its low power consumption and higher on-resistance tolerance make it ideal for a wide range of applications. Additionally, its high avalanche energy rating provides a good protection against voltage transients and reversed bias conditions.

The specific data is subject to PDF, and the above content is for reference

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