| Allicdata Part #: | BSP295H6327XTSA1TR-ND |
| Manufacturer Part#: |
BSP295H6327XTSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 1.8A SOT223 |
| More Detail: | N-Channel 60V 1.8A (Ta) 1.8W (Ta) Surface Mount PG... |
| DataSheet: |  BSP295H6327XTSA1 Datasheet/PDF |
| Quantity: | 4000 |
| Vgs(th) (Max) @ Id: | 1.8V @ 400µA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | PG-SOT223-4 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 368pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
| Series: | SIPMOS® |
| Rds On (Max) @ Id, Vgs: | 300 mOhm @ 1.8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.8A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The BSP295H6327XTSA1 can be described as a N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is classified under transistors, FETs, MOSFETs, and single. Since it is a N-channel MOSFET, its working principle too is the same.
The BSP295H6327XTSA1 was specifically designed with Bluetooth and wireless networks in mind. This device is used in various applications, such as RF (Radio Frequency) amplifiers, active antennas, antenna switch applications and local area networks. It can also be used as a power amplifier and an switch in various automotive and consumer electronics.
Regarding its working principle, it consists of a MOSFET transistor and an electric gate. The MOSFET transistor has an enhanced conductivity while the electric gate acts like a switch, allowing it to control the current flow between the source and drain. When the electric gate is activated, it creates a positive charge on the surface of the semiconductor material, increasing the conductivity of the MOSFET. This allows for a high current carrying capacity, making it an ideal device for a wide range of applications.
Additionally, since the gate has a negligible capacitance, it can be used for applications requiring high speed switching. The BSP295H6327XTSA1 is able to switch on and off in microseconds, making it an ideal device for the applications mentioned earlier. Furthermore, the device does not suffer from current leakage, allowing it to be used in various DC/DC converters, and other power supply applications.
In conclusion, the BSP295H6327XTSA1 is extremely useful for applications where high speed switching, high current carried capacity and negligible leakage are necessary. This device is ideal for RF amplifiers, active antennas, antenna switch applications and local area networks, as well as a power amplifier and switch in automotive and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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