Allicdata Part #: | BSP296NH6327XTSA1TR-ND |
Manufacturer Part#: |
BSP296NH6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 1.2A SOT-223 |
More Detail: | N-Channel 100V 1.2A (Ta) 1.8W (Ta) Surface Mount P... |
DataSheet: | BSP296NH6327XTSA1 Datasheet/PDF |
Quantity: | 5000 |
Vgs(th) (Max) @ Id: | 1.8V @ 100µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 152.7pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6.7nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 1.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.2A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FETs, or Field Effect Transistors, are a type of transistor commonly used to control current. FETs are composed of semiconductor materials that act as insulators, enabling one or more electronic signals to be applied to the FET, controlling the flow of current. BSP296NH6327XTSA1 is a surface mount FET, a type of single MOSFET with a 600V drain-source breakdown voltage and 33A continuous drain current.
Application field
This type of MOSFET is suitable for a variety of applications. Since it has a low on-resistance and a strong resistance to reverse voltage, it is commonly used for switching circuits and high-power loads, as well as for switching AC line voltages. The BSP296NH6327XTSA1 MOSFET is particularly well-suited for high-side switching, since it offers faster switching speeds and lower power losses than other FETs. It is also an excellent choice for low power, low side switching or gate drive applications.
Working principle
The BSP296NH6327XTSA1 is an N-Channel MOSFET, which means it is composed of an insulated gate electrode, source, and drain terminals. When an external electrical input is applied to the gate, an electrical field is generated, which then acts on the channel between the two terminals. This electrical field causes the electrons to redistribute within the channel, creating an inversion layer and creating a conductive pathway between the source and drain. This conductive pathway can be varied in size and strength by varying the electrical field created in the gate, and thus controlling the amount of current flow between the two terminals.
The BSP296NH6327XTSA1 is capable of switching at very high speeds and with very low amounts of power loss. This is because the MOSFET is composed of very thin layers of silicon material, making it ideal for high frequency and power switching applications. Furthermore, the insulated gate electrode ensures that the voltage applied to the gate remains very low and thus it does not consume as much electrical current as other types of FETs. In addition, this MOSFET is able to handle large drain-source voltages, which makes it highly suitable for applications that require high voltage switching.
The BSP296NH6327XTSA1 is a highly versatile single MOSFET, suitable for a variety of applications. It is capable of high speed and low power consumption, and its ability to handle large drain-source voltages makes it an excellent choice for high voltage switching applications. It is also well-suited to high-side switching, offering faster switching speeds and lower power losses than other FETs. This type of MOSFET is an ideal choice for a variety of applications, including low power, low side switching, gate drive applications, and AC line voltage switching.
The specific data is subject to PDF, and the above content is for reference
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