Allicdata Part #: | BSP296E6433-ND |
Manufacturer Part#: |
BSP296 E6433 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 1.1A SOT-223 |
More Detail: | N-Channel 100V 1.1A (Ta) 1.79W (Ta) Surface Mount ... |
DataSheet: | BSP296 E6433 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.8V @ 400µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.79W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 364pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17.2nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.1A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BSP296 E6433 is a P-Channel Junction Field Effect Transistor (JFET), suitable for very general applications. It features a low operating voltage and provides a very high input impedance relative to other field effect transistors. The device has a drain-source breakdown voltage of 24V and a drain current of 15mA.
The BSP296 E6433 combines low voltage with high performance. The device has a low operating voltage of 5V and a relatively low input impedance. The device also has a low thermal resistance of 100Kohm at room temperature, allowing the device to operate at its maximum performance point. The device also has a higher breakdown voltage of 24 volts compared to other transistors.
In order to understand the working principle of the BSP296 E6433, it is important to first understand the basics of field effect transistor operation. FETs function when a voltage is applied to the gate terminal which varies the resistance of a channel region between the gate and the source and drain. When a current is applied to the drain, it is modulated by the voltage of the gate terminal. This operation principle is called field effect, or voltage gain.
The gate of the BSP296 E6433 is designed such that it has a low threshold voltage and a very high input impedance. This makes it suitable for general applications requiring very little drive current. The gate of the device also has a very low capacitance, which allows the device to respond more quickly to a signal. The low capacitance also reduces the amount of noise generated by the device.
The drain of the BSP296 E6433 is made of a heavily doped semiconductor material. This material offers a low collector-emitter saturation voltage and provides a high drain current. This is especially important when a large signal is applied to the drain. The drain also offers a high drain-source breakdown voltage which is important for providing a certain level of protection for the device.
The BSP296 E6433 is ideal for applications where a low operating voltage and a high input and output impedance are required. These include power supplies, logic circuits, and other low power applications. It is also used in motor controllers and other motor control applications. The BSP296 E6433 is also used in switching applications such as switching of current or voltage levels.
The specific data is subject to PDF, and the above content is for reference
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