BSP299L6327HUSA1 Allicdata Electronics
Allicdata Part #:

BSP299L6327HUSA1TR-ND

Manufacturer Part#:

BSP299L6327HUSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 500V 400MA SOT-223
More Detail: N-Channel 500V 400mA (Ta) 1.8W (Ta) Surface Mount ...
DataSheet: BSP299L6327HUSA1 datasheetBSP299L6327HUSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±20V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BSP299L6327HUSA1 is a single small signal enhancement mode field-effect transistor (FET) with a N-channel, designed to cover the impedance frequency range from DC to VHF. It comes in a small outline package, ideal for surface-mounting. It is also particularly useful for electronic applications that require a low amount of current at low amplification.

The BSP299L6327HUSA1 belongs to the FET family and is manufactured using a 1.175 mm (0.046 inches) mold-on-epoxy package. This small size allows the transistor to fit into applications where there is limited space and allows for easy soldering directly to the board.

The operating principle of this FET is based on the physics of field-effect transistors. When an electric field is applied to the gate region it creates a conductive channel between the source and drain regions of the transistor. This results in an increased current flow through the transistor, creating an amplified signal. By manipulating the electric field, it is possible to control the amount of current flowing and thus the amplification of the signal.

The primary application of the BSP299L6327HUSA1 is to use it as an amplifier. It is ideal for applications that require simultaneous low noise and low distortion levels in the amplified signal. Some of these applications include signal pre-amplification, microphone pre-amplification, instrumentation amplifiers and audio power amplifiers.

The BSP299L6327HUSA1 is also useful for a variety of other electronic applications. Some of these include modulator and oscillator circuits, data conversion circuits and high speed pulse generation. It is also suitable for powering piezo transducers, solenoids and other low voltage, low current DC devices.

In conclusion, the BSP299L6327HUSA1 is a single small signal enhancement mode field-effect transistor designed to cover the impedance frequency range from DC to VHF. It is used in a variety of applications, primarily as an amplifier device and is also suitable for powering other low voltage, low current DC devices.

The specific data is subject to PDF, and the above content is for reference

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