BSZ100N06LS3GATMA1 Allicdata Electronics
Allicdata Part #:

BSZ100N06LS3GATMA1TR-ND

Manufacturer Part#:

BSZ100N06LS3GATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 20A TSDSON-8
More Detail: N-Channel 60V 11A (Ta), 20A (Tc) 2.1W (Ta), 50W (T...
DataSheet: BSZ100N06LS3GATMA1 datasheetBSZ100N06LS3GATMA1 Datasheet/PDF
Quantity: 10000
Stock 10000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TSDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BSZ100N06LS3GATMA1 is a type of transistor that belongs to the family of field-effect transistors (FETs). FETs are an important class of electronic devices used to control current in a circuit. The BSZ100N06LS3GATMA1, specifically, is a single-channel enhancement mode Field-Effect Transistor (MOSFET).

Enhancement mode MOSFETs are transistors that are designed to act as switches, meaning they can be used to turn electronic components on and off. What sets MOSFETs apart from other transistor types is their ability to switch much more rapidly and efficiently. This makes them keys players in the circuits of today’s computing and communication devices. The BSZ100N06LS3GATMA1, in particular, is used in high-frequency switching so it can be found in audio amplifiers, power supplies, motor controllers, and more.

At the heart of a MOSFET is the Gate-Source voltage. The Gate-Source voltage is essential for the MOSFET to be turned on. To understand how the BSZ100N06LS3GATMA1 operates, it is important to understand how the Gate-Source voltage works. The Gate-Source voltage difference is set by the circuit developer and determines the current flow through the transistor. This voltage is created by a voltage source that can be anything from a battery or AC current to a digital logic circuit.

When the Gate-Source voltage reaches its threshold, the MOSFET is turned on and current begins flowing. This is known as the turn-on voltage. When the Gate-Source voltage is below the threshold, the device is off and no current flows. A negative voltage applied to the Gate-Source will turn the device off and current will not flow. The low turn-on voltage of the BSZ100N06LS3GATMA1 makes it ideal for power-saving applications.

The BSZ100N06LS3GATMA1 is a highly efficient device which makes it ideal for applications where efficiency is a priority. It also offers low on-state resistance which allows for high switching speeds and high-frequency applications like those found in consumer electronics and high-speed digital circuits. Furthermore, the device is extremely durable and reliable, making it suitable for use in harsh environments such as automotive and aerospace applications. The BSZ100N06LS3GATMA1 is an incredibly versatile device that has become a staple in many different circuits.

The specific data is subject to PDF, and the above content is for reference

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