BSZ120P03NS3EGATMA1

Vgs(th) (Max) @ Id:	3.1V @ 73µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TSDSON-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Ta), 52W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3360pF @ 15V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	45nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	12 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	11A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BSZ120P03NS3EGATMA1 is a high temperature, ultra low gate charge, N-channel enhancement mode MOSFET. It is designed for power management applications and suitable for use over a wide range of switching frequencies. This article looks at the application field and working principle of the BSZ120P03NS3EGATMA1.The BSZ120P03NS3EGATMA1 is a 240 mA (Idss), 55V (Vdss) N-channel enhancement mode MOSFET. It is designed to be used in a wide variety of systems and applications, ranging from switch-mode power supplies to motor control applications. It has also found some applications in the aerospace, lighting and healthcare industries. The BSZ120P03NS3EGATMA1 is a great choice for power management applications, as it offers ultra-low gate capacitance (Ciss), optimized temperature stability and fast switching times. The BSZ120P03NS3EGATMA1 belongs to the family of MOSFETs, which stands for Metal-Oxide-Semiconductor Field Effect Transistor. MOSFETs are three-terminal devices, with a voltage (Vds) controlling the current between the source and drain terminals (Ids). The third terminal is the gate terminal, which is used to control the current flowing through the device. The way this is accomplished is by using electrons present in the gate-source terminal. A voltage difference between the gate-source terminals creates an electric field, which attracts electrons in the semiconductor channel between the source and drain. This current flows through the MOSFET and across the load. The BSZ120P03NS3EGATMA1 is a type of N-channel enhancement-mode MOSFET. It operates in Enhancement-mode when the voltage applied to the gate-source terminals is higher than the threshold voltage (Vgs(th)). When in this mode, the MOSFET is able to impedance the current from the drain to the source. This is due to the electric field between the gate and source terminals, which reduces the resistance in the channel and allows for the current to flow.The BSZ120P03NS3EGATMA1 has been designed for power management applications, as stated earlier. It is capable of handling applications with a wide range of switching frequencies, as it has a very fast gate-to-source turn-on time (tgd) of 8 ns. Additionally, it offers improved thermal stability and very low gate capacitance (Ciss) of 11.5 pF. This makes it ideal for power management applications, such as the switching of loads in the automotive and industrial sectors. The BSZ120P03NS3EGATMA1 is a good choice for a variety of applications, due to its fast switching, low gate capacitance and improved temperature stability. These features make it suitable for use in many power management systems, in a wide range of industries. In summary, the BSZ120P03NS3EGATMA1 is an N-channel enhancement mode MOSFET, which is suitable for use in power management applications. It has a low capacitance of 11.5 pF and a fast gate-to-source turn-on time of 8 ns, which makes it an ideal choice for switching loads in the automotive and industrial sectors. Additionally, it has an impressive thermal stability, making it a great solution for many power management systems.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description