BSZ150N10LS3GATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSZ150N10LS3GATMA1TR-ND |
Manufacturer Part#: |
BSZ150N10LS3GATMA1 |
Price: | $ 0.47 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 40A 8TSDSON |
More Detail: | N-Channel 100V 40A (Tc) 2.1W (Ta), 63W (Tc) Surfac... |
DataSheet: | BSZ150N10LS3GATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.42196 |
Vgs(th) (Max) @ Id: | 2.1V @ 33µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TSDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 63W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSZ150N10LS3GATMA1 is a mode of transistor which is classified and generally referred to as the single FET (Field Effect Transistor). It is a part of a larger family of transistors which also includes FETs, MOSFETs, and even MOS integrated circuit systems. In terms of technical specifications, the BSZ150N10LS3GATMA1 is a N-Channel Enhancement mode field-effect transistor with a breakdown voltage (Vbr) of 150 Volts and a continuous Drain Current (Id) of 10 Amps. Although this type of transistor is capable of operating at higher current, the safe operating area (SOA) should be observed. Moreover, the on-state resistance (RDS(on)) for this device is 3 ohms.
The application of the BSZ150N10LS3GATMA1 is wide-reaching and is generally used for power management and control purposes. It can be used as a power switch for its capability to pass a large amount of current while utilizing a low voltage. This type of transistor is also very useful when it comes to controlling and regulating motors, which requires a constant supply of electrical power. Additionally, it can also be used as a switch to control the output of a given device.
The BSZ150N10LS3GATMA1’s working principle is fairly straightforward. Essentially, the transistor works by allowing current to flow through its source terminal to its drain terminal. When a voltage is applied to the gate terminal, the amount of current that flows between the drain and the source is regulated; this is the basis of its function as a switch. In order for the transistor to actually switch on and off, the voltage applied to the gate terminal needs to exceed its threshold voltage. Once this occurs, the transistor is able to conduct current between the source and the drain terminals. This process is known as ‘threshold switching’ – and is what allows for the manipulation of the electrical signal needed for power management and control.
In summary, the BSZ150N10LS3GATMA1 is a single FET with specific technical specifications that allow it to be utilized under a variety of applications. It is a powerful tool which allows its users to control and regulate the power output of a device while simultaneously utilizing its low voltage capabilities. The working principle of the BSZ150N10LS3GATMA1 transistor is fairly straightforward; it works by allowing current to flow through its source terminal to its drain terminal. If the applied voltage to its gate terminal exceeds the threshold voltage, then it will activate and can be used as a switch. This type of transistor is an incredibly useful tool, allowing its users a wide degree of control and flexibility.
The specific data is subject to PDF, and the above content is for reference
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