Allicdata Part #: | BSZ165N04NSGATMA1TR-ND |
Manufacturer Part#: |
BSZ165N04NSGATMA1 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 31A TSDSON-8 |
More Detail: | N-Channel 40V 8.9A (Ta), 31A (Tc) 2.1W (Ta), 25W (... |
DataSheet: | BSZ165N04NSGATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.20031 |
Vgs(th) (Max) @ Id: | 4V @ 10µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TSDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 840pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 16.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.9A (Ta), 31A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BSZ165N04NSGATMA1 is an N-channel enhancement mode Gallium Arsenide Field Effect Transistor (GaAFET). It belongs to the family of metal-oxide-semiconductor field-effect transistors (MOSFETs). This transistor is mainly used in integrated circuits (ICs) applications. It allows for fast switching of power and is suitable for use in a variety of applications.
The BSZ165N04NSGATMA1 MOSFET is typically used as a switching device, allowing or blocking the flow of electric current. It can be used to increase the power efficiency and switching frequencies of circuits. For example, it can be used to control the power supply lines, to reduce the power consumption of a certain circuit, to boost the signal strength before an amplifier, or to drive high demands with large currents.
The basic working principle of the BSZ165N04NSGATMA1 is based on the principle of gate control. In particular, it features an N-channel gate, which means that when the gate is fed a positive voltage, the transistor will be able to conduct current, whereas when the gate is fed a negative voltage, the transistor will be unable to conduct any current. This gate control allows for the user to control the current flow by applying the necessary amount of voltage.
The BSZ165N04NSGATMA1 has a number of other useful characteristics which makes it suitable for various applications. It has a high current carrying capability, providing it with an increased power output of up to 4A. It also has low on-resistance, at around 0.15 ohms, allowing it to provide high current while requiring low operating voltages. Furthermore, its thermal characteristics allow it to be used in high-power applications, with a maximum junction temperature tolerance of 175°C.
The BSZ165N04NSGATMA1 is mainly used in motor control and power electronics applications, where its fast switching capabilities can be well utilized. It can be used in DC-to-DC converter circuits, DC motor control circuits, power supply circuits, power amplification circuits, and other high power applications. It is also very common in servo motor control applications, such as driving robotic arms, positioning systems and motion controllers. Additionally, its high temperature tolerance makes it suitable for use in other specialized applications as well.
In conclusion, the BSZ165N04NSGATMA1 is an N-channel enhancement mode GaAFET transistor, with a wide range of applications. Its gate-control working principle allows it to be used for controlling the flow of electric current, and its high performance characteristics makes it suitable for high power applications. It is often used in motor control, power electronics and other high-power applications, making it a reliable and versatile component.
The specific data is subject to PDF, and the above content is for reference
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