Allicdata Part #: | BSZ12DN20NS3GATMA1TR-ND |
Manufacturer Part#: |
BSZ12DN20NS3GATMA1 |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 11.3A 8TSDSON |
More Detail: | N-Channel 200V 11.3A (Tc) 50W (Tc) Surface Mount P... |
DataSheet: | BSZ12DN20NS3GATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.34400 |
Vgs(th) (Max) @ Id: | 4V @ 25µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TSDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.7nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 5.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.3A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSZ12DN20NS3GATMA1 is a type of Field Effect Transistor (FET). FETs are one of the most important components in modern electronics, and their use is growing exponentially in a variety of applications. The BSZ12DN20NS3GATMA1 is a single FET, which means it is a single device that has three terminals. It can be used for various purposes, including amplifying electrical signals and for switching other electrical signals on and off.
The BSZ12DN20NS3GATMA1 belongs to the metal-oxide-semiconductor field-effect transistor (MOSFET) family. This type of transistor relies on an electric field instead of a current, allowing it to be extremely efficient and power-efficient. The BSZ12DN20NS3GATMA1 is designed to be used in high voltage applications, such as power inverters, high-voltage batteries, and power switches.
The BSZ12DN20NS3GATMA1 is a unipolar, N-channel MOSFET, which uses electrons, instead of holes, in the channel. This type of transistor is used primarily for high-density power applications, as it is more power efficient than its P-channel counterpart. It is also used in voltage regulators and can be used for high-frequency switching in various electronic circuits.
The working principle of the BSZ12DN20NS3GATMA1 is relatively simple. It relies on the creation of an electric field across two terminals to control the flow of current. By varying the voltage applied to the gate terminal, the resistance between the drain and the source terminals can be increased or decreased, allowing the current to be switched on or off. The BSZ12DN20NS3GATMA1 has a gate-source threshold voltage of 12 volts, so a voltage higher than 12 volts must be applied in order to start the current flow.
The BSZ12DN20NS3GATMA1 is used in a wide variety of applications, including DC-DC converters, inverters, power switches, motor control circuits, and DC motor drivers. It can also be used to switch signals on and off in audio and video circuits, amplifiers, and other electronic devices. This FET is particularly useful in applications that require a high degree of precision and accuracy, such as medical instruments and control systems.
The BSZ12DN20NS3GATMA1 is a versatile and efficient FET, offering high performance and reliable operation in a wide variety of applications. Its simple operation and consistent performance make it an ideal choice for many different purposes and for a variety of electronic designs.
The specific data is subject to PDF, and the above content is for reference
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