Allicdata Part #: | BSZ110N08NS5ATMA1TR-ND |
Manufacturer Part#: |
BSZ110N08NS5ATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 80V 40A 8TSDSON |
More Detail: | N-Channel 80V 40A (Tc) 50W (Tc) Surface Mount PG-T... |
DataSheet: | BSZ110N08NS5ATMA1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.8V @ 22µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TSDSON-8-FL |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18.5nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSZ110N08NS5ATMA1 is a type of single N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), which can be used to construct a variety of electronic applications.This device is built using Silicon-On-Insulator (SOI) technology, and it has low on-resistance and can operate at high speeds. Additionally, this MOSFET also has a low threshold voltage that can support switching currents of up to 20 amperes.The BSZ110N08NS5ATMA1 is used primarily in high-frequency switching applications such as DC-DC converters and power supplies, and it has a breakdown voltage of 8 Volts. This makes the device ideal for switching applications that require high operating speeds, as well as power supplies that need to support higher current loads.Application FieldThis MOSFET is suitable for use in a variety of high-frequency switching applications, including DC-DC converters, enablers, motors, generators and power supplies. Because of its low on-resistance, this device is also suitable for applications where high speed and small size are required.In addition to these application fields, the BSZ110N08NS5ATMA1 can be used in a variety of different non-switching circuits, such as those used in amplifiers, audio equipment, video systems and optical sensors.Working PrincipleThe BSZ110N08NS5ATMA1 works on the principle of a MOSFET, which is a type of transistor that is capable of controlling the flow of electricity through it, depending on the voltage applied to its gate.This MOSFET operates in two main modes: enhancement mode, and depletion mode. In enhancement mode, electrons can flow from source to drain when a positive voltage is applied to the gate, while in depletion mode, electrons cannot flow from source to drain when no voltage is applied to the gate.When used in high-frequency switching applications, the threshold voltage is set to a specific level, and then the device can control the current flow by rapidly switching the voltage applied to the gate. This makes the device suitable for use in high-frequency switching circuits, as it can easily switch between conducting and non-conducting states.In addition to its use in switching circuits, the BSZ110N08NS5ATMA1 can also be used in a variety of other circuits, including amplifiers, opto-isolators, UPS and audio equipment.
The specific data is subject to PDF, and the above content is for reference
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