BSZ130N03MSGATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BSZ130N03MSGATMA1 is a single N-Channel MOSFET that is primarily used in mobile device power applications, such as mobile phones, tablets and other consumer electronics. It is used to control the flow of electricity between the power supply and the load. The device can be used to regulate the amount of power going to the device, and can also be used as a switch to turn on and off the power supply.

The BSZ130N03MSGATMA1 is a MOSFET, or Metal-Oxide Semiconductor Field-Effect Transistor, which is a type of transistor that is used for various electronic applications. A transistor is a type of semiconductor device that is used to control current flow between two terminals in an electrical circuit. The MOSFET differs from other types of transistors in that it is a type of transistor that uses gate voltage to control the flow of current in a circuit.

The BSZ130N03MSGATMA1 is a single N-Channel MOSFET, meaning that it is composed of a single source region and two drain regions, where the two drain regions are separated by a relatively thin gate oxide layer. This type of transistor is mainly used for low-side switching applications, such as the power supply gates found in most consumer electronics devices, such as mobile phones or tablets.

The BSZ130N03MSGATMA1 works by controlling the amount of current flow between the power supply and the load. When the gate is given a positive voltage, the device is said to be in “on” state and current will flow between the source and drain. However, when the gate voltage is given a negative voltage, the device is said to be in “off” state, and no current will flow between the source and drain.

The working principle of the BSZ130N03MSGATMA1 is based on the concept of the “Field Effect”. The field effect is the phenomenon in which a voltage applied to the gate of the MOSFET causes a change in the threshold voltage of the device, allowing it to control the current flow between the source and drain. The field effect is caused by a depletion layer formed in the gate region, due to an applied voltage. The depletion layer prevents current from flowing through the gate, and thus allows the MOSFET to control the current flow between the source and drain.

In conclusion, the BSZ130N03MSGATMA1 is a single n-channel MOSFET device that is used in many consumer electronics applications. It works by controlling the current flow between the power supply and the load, using the “Field Effect” phenomenon. The device is mainly used as a switch to turn on and off the power supply in mobile devices and other consumer electronics.

The specific data is subject to PDF, and the above content is for reference