CGHV1J025D-GP4

Series:	GaN
Packaging:	Tray
Part Status:	Active
Transistor Type:	HEMT
Frequency:	18GHz
Gain:	17dB
Voltage - Test:	40V
Current Rating:	--
Noise Figure:	--
Current - Test:	120mA
Power - Output:	25W
Voltage - Rated:	100V
Package / Case:	Die
Supplier Device Package:	Die

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Introduction

CGHV1J025D-GP4, also known as a high-voltage GaN-on-Silicon (GOS) heterojunction field effect transistor, is an advanced solution ensuring a higher drain efficiency and power output. This transistor exhibits a good linearity and excellent thermal behavior, enabling it to achieve enhanced gain and power levels when compared with standard Gallium Nitride transistors. It is also capable of providing wide bandwidths with low noise levels for a variety of applications.

Application Field

CGHV1J025D-GP4, with its wide bandwidth and low noise characteristics, is ideally suited for high power RF communication. Examples of such applications include wireless communication and 5G systems, radar systems, high power amplifiers, wideband amplifiers, pulse amplifiers, and other power electronics applications. Moreover, with its high efficiency, it can be employed in applications such as network switches and base stations for efficient signal processing.

Working Principle

The transistor is a three-terminal semiconductor device which, when activated, allows the flow of current from its gate to drain terminal. It operates in two possible transduction modes, namely the enhancement mode (E-mode) and the depletion mode (D-mode). When operating in the E-mode, an initial voltage applied to the gate terminal alters the electron density of the device channel; this, in turn, affects the current flow from the source to the drain. When operating in the D-mode, the device is activated when current is originated from the drain to the source terminal.When the CGHV1J025D-GP4 is activated, the operation of the device is determined by the gate voltage to the drain current (Vgs-Id) characteristics. As the gate voltage increases, the electron concentration inside the device channel also increases, increasing the current flow from source to drain. This effect is observed until the threshold voltage (Vth) is reached, when a thermal runaway is prevented by limiting the increase of the current gain of the device. An important feature of the CGHV1J025D-GP4 is its drain current compression (I q compression). This is the phenomenon of current density saturation when the drain-source voltage is increased to a certain level. This is useful for applications requiring a high power output, such as amplifier applications.

Conclusion

In conclusion, CGHV1J025D-GP4 is a highly efficient, low-noise, wide bandwidth GaN-on-Silicon (GOS) heterojunction field effect transistor. It can be used in a variety of high power RF communication applications, such as wireless communication and 5G systems, radar systems, high power amplifiers, wideband amplifiers, and pulse amplifiers. With its drain current compression characteristic, it is also ideal for applications that require high power output. When activated, the operation of CGHV1J025D-GP4 is determined by its gate voltage to the drain current (Vgs-Id) characteristics.

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