Allicdata Part #: | CY14B256LA-ZS25XIT-ND |
Manufacturer Part#: |
CY14B256LA-ZS25XIT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC NVSRAM 256K PARALLEL 44TSOP |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ... |
DataSheet: | CY14B256LA-ZS25XIT Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
Base Part Number: | CY14*256 |
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The CY14B256LA-ZS25XIT is a piece of off-the-shelf, field-programmable memory integrated circuit. It is designed to provide fast and reliable data storage, while reducing the footprint of a standard memory solution. It is well suited for embedded applications that require a wide range of memory sizes and features.
The CY14B256LA-ZS25XIT memory is built on an advanced, high-performance silicon process. Its high-density organization allows for dense packing of memory elements, which can be used to reduce power consumption in embedded applications. It also provides enhanced signal integrity and noise immunity.
The memory is organized into 32 separate segments, each of which can be independently controlled to enable efficient data storage and retrieval. Each segment can store up to 256 megawords (1 megaword is 16 megabits) of data. Data is written to the device using a variety of techniques including single write, burst write, and multi-burst write. This allows for efficient and reliable data storage.
In addition, the CY14B256LA-ZS25XIT memory can be used to store code, as well as data. Code can be stored in up to 256 megawords of programmable memory, and can be executed directly from the device. The device supports fast programming and high speed execution, making it ideal for embedded applications where performance is critical.
The CY14B256LA-ZS25XIT offer a variety of features to enhance performance. These include error detection and correction, parity checking, chip select decoding, on-chip memory self-test, data scramble and ECC. In addition, the memory supports multiple power down modes, allowing for efficient power management when the device is inactive.
The CY14B256LA-ZS25XIT is also designed for scalability and cost effectiveness. It includes a 25x100-pin connector for easy integration with other memory solutions. The device can be used in a variety of topologies, including parallel, serial, multiplexed and looping. This flexibility allows for greater design flexibility, and more efficient memory solutions.
Finally, the CY14B256LA-ZS25XIT is designed for optimum performance and reliability. The device offers a wide range of I/Os and signal types, including CMOS, TTL, LVTTL, and Hi-Z. It also comes with a high performance signal buffer, allowing for high signal speed, low power consumption, and improved signal integrity.
In conclusion, the CY14B256LA-ZS25XIT is an ideal choice for embedded and industrial applications that require a wide range of memory sizes and features. Its flexibility, scalability, and reliability make it an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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