![CY14E116L-ZS25XI Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | CY14E116L-ZS25XI-ND |
Manufacturer Part#: |
CY14E116L-ZS25XI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC NVSRAM 16M PARALLEL 44TSOP |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 16Mb (2M x 8)... |
DataSheet: | ![]() |
Quantity: | 38 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 16Mb (2M x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The CY14E116L-ZS25XI is a memory device designed to solve one of the most pervasive problems in modern computing applications - data storage. This type of memory is a non-volatile type of storage, meaning that when powered down, the data stored in the memory is still retrievable after power is restored. This makes them extremely useful, as they can be used in applications that need to retain their data even in the event of a power failure.
The primary application of CY14E116L-ZS25XI memory is in embedded systems. These are devices with limited processing power and limited memory, making them ideal for use in a variety of applications. Common uses include medical devices, industrial equipment, security systems and other devices where data retention is critical.
The CY14E116L-ZS25XI memory is based on a two-transistor cell. This type of memory cell is made up of two transistor-like components, each connected to a different bit line. When the voltage on one of the bit lines rises above a certain level, it causes one of the components to flip, thus writing a "1" bit to the memory. Conversely, if the voltage on the other bit line remains above the threshold, then a "0" bit is written to the memory.
The two-transistor cell is particularly appealing because it is fast and reliable. Writing data to the memory requires just two electrical signals, and the cycle time is less than 50 nanoseconds. Additionally, the cells are highly stable over time, and their design provides excellent noise immunity, meaning that data stored in the memory is highly reliable.
In addition to offering high reliability and speed, the CY14E116L-ZS25XI has a low power consumption. This is important for embedded systems, as the power consumption of a device can make the difference between a successful product and a failure. The low power consumption of the CY14E116L-ZS25XI makes it ideal for a variety of applications that require both fast data transfer and low power consumption.
The CY14E116L-ZS25XI also offers a high density of data storage. This is achieved by cramming more cells onto a single chip. This type of memory is often referred to as limited capacity or "flash" memory because of its ability to store large amounts of data in a relatively small amount of space. For example, the CY14E116L-ZS25XI can hold up to 256 MB of data.
In summary, the CY14E116L-ZS25XI is a fast, reliable and low-power type of memory that is ideal for embedded systems and other applications where data retention is critical. Its two-transistor cell design makes it fast and reliable, and its high density allows for large amounts of data to be stored in a small amount of space. It is a great choice for any application where these features are important.
The specific data is subject to PDF, and the above content is for reference
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