DDTC113TCA-7 Discrete Semiconductor Products |
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Allicdata Part #: | DDTC113TCADITR-ND |
Manufacturer Part#: |
DDTC113TCA-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC113TCA-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | DDTC113 |
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DDTC113TCA-7 is a type of bipolar junction transistor (BJT), commonly referred to as a pre-biased type, which operates by controlling the flow of current between two electrodes called the emitter and collector. The device has a built in VCE or a collector-to-emitter voltage which is used to bias the transistor and makes it easier to apply to a wide variety of applications.
The device consists of a semiconducting material (such as silicon) in which three regions, emitter, base and collector, are separated by an appropriate dopant to form a PN junction between them. A voltage applied across the junctions induces current through the base region, which allows for amplification of the collector current.
Application Field
DDTC113TCA-7 transistors are primarily used in analog circuits and usually as switches. The device can be used to switch between two or more electronic signals or as an electronic speed controller. These transistors are often used as amplifiers and oscillators, in audio systems, such as in amplifiers, microphones, or speakers. The device is also used in power supplies, alarms and control systems.
Working Principle
The DDTC113TCA-7 uses the collector-to-emitter voltage as a reference to bias the transistor. This setup eliminates the need for an external bias circuit and allows for a simpler circuit design. Even when the voltage applied to the base terminal is small, the device can achieve a controlled collector current.
The device works by creating an electric field between its base and collector, where the field effect transistor (FET) operates. The electrons in the base region are attracted towards the collector and are subsequently pushed away by the electrons already present in the base region. This creates a current, and when the base voltage is increased, the current increases exponentially, resulting in amplification. The device can also be used in reverse, where the electrons present in the base region are attracted by the collector and are subsequently pushed away by the electrons in the base region, resulting in an increased collector current.
The DDTC113TCA-7 is a versatile device with many applications, it can be used to amplify current or voltage, control output signals, act as a switching element, or regulate speed. Thanks to its low voltage requirement, the device is ideal for many low power applications. It is easy to use and can be integrated into any application for which it is suitable.
The specific data is subject to PDF, and the above content is for reference
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