DDTC122LU-7 Allicdata Electronics
Allicdata Part #:

DDTC122LUDITR-ND

Manufacturer Part#:

DDTC122LU-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC122LU-7 datasheetDDTC122LU-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.04823
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Resistor - Emitter Base (R2): 10 kOhms
Base Part Number: DDTC122
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V
Series: --
Resistor - Base (R1): 220 Ohms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DDTC122LU-7 is a single, pre-biased bipolar junction transistor (BJT) that is designed for applications requiring high-speed switching, low distortion, and low-noise operation. It offers a wide range of features that make it suitable for a variety of applications, including low-power switching, high-speed switching, and audio amplifier applications. In addition, the device can be used as an amplifier in high-current systems.

The DDTC122LU-7 is made from high-purity silicon and features a proprietary collector layout, which provides superior current-handling capabilities. The device is designed for low-current operation, with a maximum current rating of 200mA. It is also designed for low-noise operation, providing superior switching performance.

The DDTC122LU-7 works by combining npn and pnp transistors. It uses a base-emitter structure to allow current flow between the collector and emitter while providing current amplification. This arrangement is referred to as "composite," and it allows the device to provide low-power operation and high-frequency switching. The device also features a voltage-swing control, which allows current to be controlled over a wide range of output power levels.

The DDTC122LU-7 features an integrated bias transistor. The bias transistor provides low-impedance base current for the device, reducing power dissipation and increasing device performance. The integrated bias transistor also provides improved speed and accuracy in controlling the current flow from the collector to the emitter. The bias transistor can also be used to bias the collector-emitter voltage, allowing for greater power savings.

The DDTC122LU-7 is designed for use in linear, audio, and low-noise applications. In linear applications, it is ideal for applications such as audio amplifiers and signal conditioning circuits. In audio applications, it is suitable for low-power amplifiers and signal routing devices. In low-noise applications, it can be used in signal routing devices and signal processing circuits.

The DDTC122LU-7 is a versatile and reliable BJT that can meet the requirements of a variety of applications. It is an excellent choice for a single, pre-biased bipolar junction transistor that offers high-speed switching, low distortion, and low-noise operation. The integrated bias transistor and wide range of features make it an ideal device for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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